Metal oxide thin film, method of producing same, and coating solution for forming metal oxide thin film used in said method
A metal oxide thin film according to the present invention has a peak which is attributed to 1s electrons of nitrogen in a binding energy range of 402 eV to 405 eV in an XPS spectrum obtained by X-ray photoelectron spectroscopy, in which peak areas, which are obtained by separation of peaks having a peak energy of a metal-oxygen bond attributed to 1s electrons of oxygen, satisfy the following expression. 0.9< D/E (1) (D represents a peak area of a component having a peak position in a binding energy range of 529 eV or higher and lower than 531 eV, and E represents a peak area of a component having a peak position in a binding energy range of 531 eV to 532 eV.)
1. A metal oxide thin film comprising
a component having a peak position which is attributed to 1 s electrons of nitrogen in a binding energy range of 402 eV to 405 eV in an XPS spectrum obtained by X-ray photoelectron spectroscopy,
wherein peak areas, which are obtained by separation of peaks attributed to 1 s electrons of oxygen, satisfy 0.9<D/E,
D represents a peak area of a component having a peak position in a binding energy range of 529 eV or higher and lower than 531 eV, and
E represents a peak area of a component having a peak position in a binding energy range of 531 eV to 532 eV, and
wherein a content of indium is 50 atom % or higher with respect to all metal elements contained in the metal oxide thin film.
2. The metal oxide thin film according to claim 1 ,
wherein in the XPS spectrum, a component having a peak position in a binding energy range of 406 eV to 408 eV is not substantially contained.
3. The metal oxide thin film according to claim 1 ,
wherein 0.9<D/E≦5.5 is satisfied.
4. The metal oxide thin film according to claim 3 ,
wherein 1≦D/E≦5.1 is satisfied.
5. The metal oxide thin film according to claim 3 , wherein the metal oxide thin film is a semiconductor thin film.
6. The metal oxide thin film according to claim 3 ,
wherein indium and at least one metal selected from the group consisting of zinc, tin, gallium, and aluminum are contained.
7. A thin film transistor comprising the metal oxide thin film according to claim 5 as an active layer.
8. A display apparatus comprising the thin film transistor according to claim 7 .