High definition heater and method of operation
An apparatus is provided, by way of example, a heater for use in semiconductor processing equipment, that includes a base functional layer having at least one functional zone. A substrate is secured to the base functional layer, and a tuning layer is secured to the substrate opposite the base functional layer. The tuning layer includes a plurality of zones that is greater in number than the zones of the base functional layer, and the tuning layer has lower power than the base functional layer. Further, a component, such as a chuck by way of example, is secured to the tuning layer opposite the substrate. The substrate defines a thermal conductivity to dissipate a requisite amount of power from the base functional layer.
1. An apparatus comprising:
a base functional layer comprising at least one functional zone, and defining an aperture;
a substrate secured to the base functional layer;
a tuning layer secured to the substrate opposite the base functional layer, and the tuning layer comprising a plurality of zones that is greater in number than the zones of the base functional layer;
a component secured to the tuning layer opposite the substrate; and
a routing layer disposed between the base functional layer and the tuning layer, wherein the routing layer defines an internal cavity for routing one or more power lines to the tuning layer, wherein the internal cavity extends parallel with the tuning layer to provide access to the plurality of zones,
wherein the one or more power lines are routed through the aperture of the base functional layer to the internal cavity of the routing layer to connect to the plurality of zones of the tuning layer,
wherein the base functional layer is a thermal layer for providing heating or cooling to the component,
wherein the tuning layer provides lower power than the base functional layer when the base functional layer is heating, and
wherein the substrate distributes and transfers heat from the base functional layer.
2. The apparatus according to claim 1 , wherein at least one of the base functional layer and the tuning layer are heaters.
3. The apparatus according to claim 1 , wherein at least one of the base functional layer and the tuning layer are temperature sensors.
4. The apparatus according to claim 1 , wherein the component is selected from the group consisting of a chuck, a pedestal, a wafer table, a substrate support, and a showerhead.
5. The apparatus according to claim 1 , wherein at least one of the base functional layer and the tuning layer comprise a resistive material with TCR characteristics such that the at least one base functional layer and the tuning layer function as both a heater and as a temperature sensor.
6. The apparatus according to claim 1 , wherein at least one of the base functional layer and the tuning layer have a CTE that is matched with a CTE of the substrate.
7. The apparatus according to claim 1 further comprising a secondary tuning layer secured to a top surface of the component.
8. The apparatus according to claim 1 further comprising a plurality of tuning layers.
9. The apparatus according to claim 1 , wherein at least one of the base functional layer and the tuning layer are disposed around a periphery of the component.
10. The apparatus according to claim 1 further comprising:
an upper member disposed proximate the tuning layer, the upper member defining a plurality of tapered cavities aligned with each of the zones, the upper member further comprising a plurality of power vias;
a lower member adjacent the upper member and defining a plurality of reverse tapered cavities aligned with the tapered cavities of the upper member, the lower member further comprising a plurality of power vias in communication with the power vias of the upper member,
wherein control elements are disposed within the reverse tapered cavities of the lower member and are in communication with at least one of the base functional layer and the tuning layer.
11. The apparatus according to claim 10 , wherein the control elements communicate across a digital bus.
12. The apparatus according to claim 1 , wherein the base functional layer comprises a plurality of thermoelectric elements.
13. The apparatus according to claim 12 , wherein the thermoelectric elements are arranged in zones.
14. The apparatus according to claim 12 , wherein the thermoelectric elements are disposed on top of a chill plate.
15. The apparatus according to claim 1 , wherein at least one of the base functional layer and the tuning layer are heaters and define a layered construction.
16. The apparatus according to claim 1 , wherein at least one of the base functional layer and the tuning layer are heaters and define a polyimide heater.
17. The apparatus according to claim 1 further comprising a plurality of heat spreaders disposed proximate each of the zones of the tuning layer.
18. The apparatus according to claim 17 , wherein the heat spreaders are a material selected from the group consisting of Aluminum, Copper, Pyrolytic Graphite, and Aluminum Nitride.
19. The apparatus according to claim 1 , wherein at least one of the base functional layer and the tuning layer are disposed along a vertical direction of the component.