Horizontal coupling to silicon waveguides
Techniques for forming a facet optical coupler that includes a waveguide formed over a trench of a silicon substrate are described. The trench is formed in a silicon substrate and then filled with a dielectric material. The waveguide is patterned on the dielectric material over the trench such that the waveguide is disposed a distance from the first surface. A first end of the waveguide has a first size and a second end of the waveguide distal the first end has a second size different than the first size. A material of the waveguide and the first size define a mode size of the waveguide.
1. A method of forming a facet optical coupler comprising:
forming a trench in a silicon substrate;
forming a first waveguide on an oxide layer overlying the silicon substrate in a region separate from the trench, wherein the first waveguide and the trench are non-overlapping;
filling the trench with a dielectric material; and
patterning a second waveguide on the dielectric material overlying at least part of the trench and at least part of the first waveguide.
2. The method of claim 1 , wherein forming the second waveguide includes forming the second waveguide over the trench such that the second waveguide is disposed at a distance L from a first surface of the trench, wherein a first end of the second waveguide terminating over the trench has a first size and a second end of the second waveguide distal the first end has a second size different than the first size, and wherein a material of the second waveguide and the first size define a mode size of the second waveguide smaller than 2L.
3. The method of claim 2 , wherein a lateral dimension of the second waveguide substantially parallel to the first surface of the trench is smaller at the first end than at the second end.
4. The method of claim 2 , wherein at least a portion of the first waveguide overlaps with at least the second end of the second waveguide.
5. The method of claim 4 , wherein the first waveguide is positioned between the second waveguide and the silicon substrate.
6. The method of claim 5 , wherein the first waveguide and the second waveguide are separated by a layer of dielectric material.
7. The method of claim 4 , wherein the first waveguide comprises a third end overlapping the second waveguide and a fourth end distal the third end, and wherein the first waveguide has a lateral dimension substantially parallel to the first surface that increases along a direction from the third end to the fourth end.
8. The method of claim 2 , wherein 2L is more than approximately 3 microns.
9. The method of claim 2 , wherein the material of the second waveguide and the first size define a vertical mode size of the second waveguide smaller than 2L.
10. The method of claim 1 , wherein the second waveguide includes one or more of silicon, Si 3 N 4 , and SiON.
11. The method of claim 1 , further comprising dicing the silicon substrate at the trench.
12. The method of claim 11 , wherein the first end of the second waveguide and a side of the filled trench form a facet.
13. An apparatus comprising:
a silicon substrate having an edge and a trench formed at the edge;
a first waveguide formed on an oxide layer overlying the silicon substrate in a region separate from the trench;
a dielectric material filling the trench; and
a second waveguide formed on the dielectric material overlying at least part of the trench and at least part of the first waveguide, wherein a first end of the second waveguide and a side of the dielectric material form a facet of the apparatus.
14. The apparatus of claim 13 , wherein the second waveguide is disposed at a distance L from a first surface of the trench, wherein a first end of the second waveguide proximate the facet has a first size and a second end of the second waveguide distal the first end has a second size different than the first size, and wherein a material of the second waveguide and the first size define a mode size of the waveguide smaller than 2L.
15. The apparatus of claim 14 , wherein a lateral dimension of the second waveguide substantially parallel to the first surface of the trench is smaller at the first end than at the second end.
16. The apparatus of claim 14 , wherein at least a portion of the first waveguide overlaps with the second end of the second waveguide.
17. The apparatus of claim 16 , wherein the first waveguide is positioned between the second waveguide and the silicon substrate.
18. The apparatus of claim 17 , wherein the first waveguide and the second waveguide are separated by a layer of dielectric material.
19. The apparatus of claim 14 , wherein the first waveguide comprises a third end overlapping the second waveguide and a fourth end distal the third end, and wherein the first waveguide has a lateral dimension substantially parallel to the first surface that increases along a direction from the third end to the fourth end.
20. The apparatus of claim 14 , wherein 2L is more than approximately 3 microns.
21. The apparatus of claim 14 , wherein the material of the second waveguide and the first size define a vertical mode size of the second waveguide smaller than 2L.
22. The apparatus of claim 13 , wherein the second waveguide includes one or more of silicon, Si 3 N 4 , and SiON.
23. The apparatus of claim 13 , wherein the first waveguide and the trench are non-overlapping.