Apparatus and method for a silicon modulator with strong gradient slab doping
View Patent ↗Methods of fabricating electro-optical modulators and the resulting electro-optical modulators are described herein. In some embodiments, a method comprises defining a waveguide having a core region, implanting dopants into a contact region of the waveguide, and diffusing the dopants laterally toward the core region. In some embodiments, a method comprises implanting n-type and p-type dopants into respective first and second contact regions of the optical waveguide and annealing the optical waveguide to induce lateral diffusion of the n-type and p-type dopants toward a center of the optical waveguide. In some embodiments, an electro-optical modulator comprises a waveguide comprising a contact region and a core region, and the waveguide has a dopant concentration that decreases from the contact region to the core region according to a super-linear curve. Methods and resulting structures described herein provide desirable electrical resistance and low overlap between dopants and optical signals.
1. A method of forming an electro-optical modulator, the method comprising:
defining a waveguide having a core region;
masking the waveguide;
implanting dopants into a contact region of the waveguide;
diffusing the dopants laterally toward the core region; and
creating a doping profile from the contact region to the core region,
wherein the doping profile is a super-linear curve having two separate portions, each portion exponentially decreasing in a lateral direction towards the core region,
the doping profile configured to have a first optical power level in one portion of the two separate portions and a second optical power level in the other portion of the two separate portions,
wherein the doping profile is configured to reduce overlap between a portion of the waveguide that carries an optical signal and increase an electrical conductivity of the waveguide by increasing a concentration of the dopants in the waveguide.
2. The method of claim 1 , wherein diffusing the dopants laterally toward the core region comprises annealing the waveguide.
3. The method of claim 1 , wherein diffusing the dopants laterally toward the core region causes the creating the doping profile from the contact region to the core region.
4. The method of claim 3 , wherein the super-linear curve drops by at least 5% per 0.05 microns in the lateral direction within the waveguide.
5. The method of claim 3 , wherein the super-linear curve comprises creating the doping profile that drops by at least 10% per 0.05 microns in the lateral direction within the waveguide.
6. The method of claim 1 , wherein each portion of the super-linear curve is a separate exponential curve.
7. The method of claim 1 , wherein diffusing the dopants laterally toward the core region comprises creating the doping profile comprising:
at least a first rate of change of a dopant concentration at any point within a first region of the waveguide,
wherein the first region of the waveguide is located entirely within 0.3 microns of the contact region in the lateral direction within the waveguide;
at least a second rate of change of the dopant concentration at any point within a second region of the waveguide,
wherein the second region of the waveguide is located entirely within 0.1 microns of the core region in the lateral direction,
wherein the at least the first rate of change of the dopant concentration is at least three times greater than the at least the second rate of change of the dopant concentration,
wherein the first region includes one of the two separate portions, and the second region includes the other of the two separate portions,
wherein the doping profile is configured to reduce overlap between a portion of the waveguide that carries an optical signal and increase the electrical conductivity of the waveguide by increasing the concentration of the dopants in the waveguide.
8. The method of claim 1 further comprising:
implanting a second plurality of dopants into a second contact region of the waveguide;
diffusing the second plurality of dopants laterally toward the core region; and
creating a second doping profile from the second contact region to the core region, wherein the second doping profile is a super-linear curve having two separate portions, each portion exponentially decreasing in a lateral direction towards the core region from the second contact region.
9. A method of forming a doped optical waveguide, the method comprising:
implanting n-type and p-type dopants into respective first and second contact regions of the doped optical waveguide;
annealing the doped optical waveguide to induce lateral diffusion of the n-type and p-type dopants toward a center of the dopoed optical waveguide, wherein annealing the doped optical waveguide causes creating a first doping profile from the first contact region to the center and a second doping profile from the second contact region to the center; and
creating the first doping profile from the first contact region to the center, and the second doping profile from the second contact region to the center, wherein each doping profile is a super-linear curve having two separate portions, wherein each portion exponentially decreases in a lateral direction towards the center, wherein each portion of the super-linear curve of each doping profile includes a separate exponential curve.
10. The method of claim 9 , wherein the super-linear curve of the first doping profile from the first contact region to the center drops by at least 5% per 0.05 microns in the lateral direction within the doped optical waveguide.
11. The method of claim 9 , wherein the super-linear curve of the first doping profile from the first contact region to the center drops by at least 10% per 0.05 microns in the lateral direction within the doped optical waveguide.
12. An electro-optical modulator, comprising:
a waveguide comprising a contact region and a core region,
wherein the waveguide has a dopant concentration that decreases from the contact region to the core region according to a super-linear curve having two separate portions, wherein each portion exponentially decreases in a lateral direction towards the core region,
wherein each portion of the super-linear curve is a separate exponential curve, wherein the waveguide has a doping profile,
wherein the doping profile is configured to reduce overlap between a portion of the waveguide that carries an optical signal and increase electrical conductivity of the waveguide by increasing concentration of dopants in the waveguide,
wherein the waveguide comprises:
a first doping region between the contact region and the core region having an n-type dopant concentration that decreases from the contact region to the core region according to a first super-linear curve; and
a second doping region between a second contact region and the core region having a p-type dopant concentration that decreases from the second contact region to the core region according to a second super-linear curve,
the first super-linear curve comprises two separate portions, each portion exponentially decreasing in the lateral direction towards the core region,
the second super-linear curve comprises two separate portions, each portion exponentially decreasing in the lateral direction towards the core region.
13. The electro-optical modulator of claim 12 , wherein the dopant concentration decreases by at least 5% per 0.05 microns in the lateral direction within the waveguide.
14. The electro-optical modulator of claim 12 , wherein the dopant concentration decreases by at least 10% per 0.05 microns in the lateral direction within the waveguide.
15. The electro-optical modulator of claim 12 , wherein the waveguide further comprises:
a first region located entirely within 0.1 microns of the contact region in the lateral direction within the waveguide; and
a second region located entirely within 0.1 microns of the core region in the lateral direction,
wherein the dopant concentration decreases at any point within the first region at least at a first rate of change that is at least three times greater than at least a second rate of change at which the dopant concentration decreases at any point within the second region,
wherein the first region includes one of the two separate portions, and the second region includes the other of the two separate portions.
16. The electro-optical modulator of claim 12 , wherein the waveguide further comprises:
a first region located entirely within 0.3 microns of the contact region in the lateral direction within the waveguide; and
a second region located entirely within 0.1 microns of the core region in the lateral direction,
wherein the dopant concentration decreases at any point within the first region at least at a first rate of change that is at least three times greater than at least a second rate of change at which the dopant concentration decreases at any point within the second region,
wherein the first region includes one of the two separate portions, and the second region includes the other of the two separate portions.
17. An electro-optical modulator comprising:
a rib waveguide comprising a core region, a first contact region and a second contact region;
the core region including a first portion, a second portion, and a depletion region that separates the first and second portion, wherein the depletion region substantially lacks charge carrier; and
wherein the rib waveguide has a dopant concentration that includes p-type dopants that decrease from the first contact region to the core region according to a super-linear curve and n-type dopants that decrease from the second contact region to the core region according to a super-linear curve;
wherein each super-linear curve has two separate portions, wherein each portion of the super-linear curve is a separate exponential curve that exponentially decreases in a lateral direction towards the core region such that there is low overlap between an optical signal and the n-type and p-type dopants in the rib waveguide,
wherein n-type dopants concentrations follow a gradient from the second contact region to the core region,
wherein p-type dopant concentrations follow a gradient from the first contact region to the core region.