Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

1. A method of manufacturing a semiconductor device, comprising:

supplying a first precursor and a first nitriding agent onto a substrate having a surface formed thereon with an oxygen-containing film in order to form an initial film containing oxygen on the oxygen-containing film;

modifying the initial film into a first nitride film not containing oxygen by nitriding the initial film with plasma; and

supplying a second precursor and a second nitriding agent onto the substrate in order to form a second nitride film not containing oxygen on the first nitride film.

2. The method of claim 1 , wherein the initial film is a nitride film containing oxygen.

3. The method of claim 1 , wherein the second nitride film is formed to have a thickness equal to or thicker than a thickness of the first nitride film.

4. The method of claim 1 , wherein the second nitride film is formed to be thicker than the first nitride film.

5. The method of claim 1 , wherein the act of forming the initial film includes performing a first cycle a first predetermined number of times, the first cycle including: supplying the first precursor onto the substrate; and supplying the first nitriding agent onto the substrate, the act of supplying the first precursor onto the substrate and the act of supplying the first nitriding agent onto the substrate being performed in a non-simultaneous manner.

6. The method of claim 5 , wherein the act of forming the second nitride film includes performing a second cycle a second predetermined number of times, the second cycle including: supplying the second precursor onto the substrate; and supplying the second nitriding agent onto the substrate, the act of supplying the second precursor onto the substrate and the act of supplying the second nitriding agent onto the substrate being performed in a non-simultaneous manner.

7. The method of claim 6 , wherein the second predetermined number of times is set to be larger than the first predetermined number of times.

8. The method of claim 1 , wherein a thickness of the initial film is set to fall within a range of 0.8 nm to 1.5 nm.

9. The method of claim 1 , wherein a thickness of the initial film is set to fall within a range of 1.0 nm to 1.2 nm.

10. The method of claim 1 , further comprising: nitriding the surface of the second nitride film with plasma.

11. The method of claim 1 , further comprising: nitriding the surface of the oxygen-containing film with plasma prior to forming the initial film.

12. The method of claim 1 , wherein the first nitriding agent or the second nitriding agent excited with plasma is supplied onto the substrate when the plasma nitridation is performed.

13. The method of claim 1 , wherein the first precursor has the same molecular structure as the second precursor.

14. The method of claim 1 , wherein the first nitriding agent has the same molecular structure as the second nitriding agent.

15. The method of claim 1 , wherein the act of modifying the initial film into the first nitride film and the act of forming the second nitride film on the first nitride film are performed in a same process chamber.

16. The method of claim 11 , wherein the act of nitriding the surface of the oxygen-containing film with plasma and the act of forming the initial film are performed in a same process chamber.

17. The method of claim 1 , wherein in the act of modifying the initial film, oxygen contained in the initial film is desorbed out of the initial film.

18. The method of claim 1 , wherein a Si—N bond density of the first nitride film is higher than a Si—N bond density of the initial film.