Integrated waveguide coupler

1. A method for fabricating an integrated waveguide coupler, the method comprising:

at least partially filling a gap with a first material having a first index of refraction, wherein:

the gap is from 5 to 100 microns wide;

the gap is between a semiconductor waveguide and an opto-electronic device;

the semiconductor waveguide is configured to guide light in a direction of beam propagation;

the opto-electronic device comprises a facet;

the facet has an orientation identified by a direction normal to the facet;

the direction normal to the facet is not parallel with the direction of beam propagation; and

the opto-electronic device is configured to guide light to pass through the facet; and

at least partially filling the gap with a second material having a second index of refraction that is greater than the first index of refraction, wherein the direction of beam propagation is ascertained at an interface between the semiconductor waveguide and the second material.

2. The method for fabricating the integrated waveguide coupler as recited in claim 1 , the method further comprising at least partially filling the gap with a third material, wherein:

the second material is between the first material and the third material;

the third material has a third index of refraction; and

the second index of refraction is greater than the third index of refraction.

3. The method for fabricating the integrated waveguide coupler as recited in claim 2 , wherein:

the first material is silicon dioxide;

the third material is silicon dioxide; and

the second material is amorphous silicon.

4. The method for fabricating the integrated waveguide coupler as recited in claim 1 , wherein the opto-electronic device comprises III-V material.

5. The method for fabricating the integrated waveguide coupler as recited in claim 1 , wherein the opto-electronic device is a gain medium for a laser.

6. An integrated waveguide coupler comprising:

a silicon substrate;

a semiconductor waveguide, wherein:

the semiconductor waveguide is disposed on the silicon substrate;

the semiconductor waveguide is configured to guide light in a direction of beam propagation; and

the semiconductor waveguide comprises crystalline silicon;

a chip, wherein:

the chip is disposed on the silicon substrate;

the chip comprises III-V material;

the chip comprises a facet;

the chip is configured to guide light to pass through the facet;

the facet has an orientation identified by a direction normal to the facet; and

the direction normal to the facet is not parallel with the direction of beam propagation of the semiconductor waveguide; and

a connecting waveguide between the semiconductor waveguide and the facet of the chip, wherein:

the connecting waveguide comprises amorphous silicon;

the direction of beam propagation is ascertained at an interface between the semiconductor waveguide and the connecting waveguide; and

the connecting waveguide is configured to guide light in the amorphous silicon from the semiconductor waveguide to the chip.

7. The integrated waveguide coupler as recited in claim 6 , wherein the connecting waveguide comprises a first material having a first index of refraction and a second material having a second index of refraction higher than the first index of refraction.

8. The integrated waveguide coupler as recited in claim 7 , wherein:

the semiconductor waveguide has a height;

the connecting waveguide has a height; and

the height of the connecting waveguide is equal to the height of the semiconductor waveguide.

9. The integrated waveguide coupler as recited in claim 6 , wherein: the connecting waveguide has a length from 5 to 100 microns.

10. The integrated waveguide coupler as recited in claim 6 , wherein the semiconductor waveguide comprises:

a ridge for guiding an optical mode; and

crystalline silicon.

11. The integrated waveguide coupler as recited in claim 6 , wherein the connecting waveguide comprises a ridge for guiding an optical mode.