NANOSTRUCTURES HAVING LOW DEFECT DENSITY AND METHODS OF FORMING THEREOF
A method of forming nanostructure comprises forming self-assembled nucleic acids on at least a portion of a substrate. The method further comprises contacting the self-assembled nucleic acids on the at least a portion of a substrate with a solution comprising at least one repair enzyme to repair defects in the self-assembled nucleic acids. The method may comprise repeating the repair of defects in the self-assembled nucleic acids on the at least a portion of a substrate until a desired, reduced threshold level of defect density is achieved. A semiconductor structure comprises a pattern of self-assembled nucleic acids defining a template having at least one aperture therethrough. At least one of the apertures has a dimension of less than about 50 nm.
1 . A semiconductor structure comprising a pattern of self-assembled nucleic acids defining a template having at least one aperture therethrough, the at least one aperture comprising at least one dimension of less than about 50 nm.
2 . The semiconductor structure of claim 1 , wherein the pattern of self-assembled nucleic acids comprise a pattern of self-assembled ribonucleic acid (RNA) strands, deoxyribonucleic acid (DNA) strands, peptide nucleic acid (PNA) strands, or combinations thereof.
3 . The semiconductor structure of claim 1 , wherein the at least one aperture in the pattern of self-assembled nucleic acids comprises at least one dimension of less than about 40 nm.
4 . The semiconductor structure of claim 1 , wherein the at least one aperture in the pattern of self-assembled nucleic acids comprises at least one dimension of less than about 30 nm.
5 . The semiconductor structure of claim 1 , wherein the at least one aperture in the pattern of self-assembled nucleic acids comprises at least one dimension of less than about 20 nm.
6 . The semiconductor structure of claim 1 , wherein the at least one aperture in the pattern of self-assembled nucleic acids comprises at least one dimension of less than about 10 nm.
7 . A semiconductor structure comprising a pattern of self-assembled nucleic acids on a substrate, the pattern of self-assembled nucleic acids comprising at least one aperture therethrough and the at least one aperture comprising at least one dimension of less than about 50 nm.
8 . The semiconductor structure of claim 7 , wherein the at least one aperture extends into the substrate.
9 . The semiconductor structure of claim 8 , further comprising a nanocomponent selected from the group consisting of a silicon nanowire, a gold nanoparticle, a semiconductive quantum dot, a fluorescent quantum dot, and combinations thereof in the at least one aperture.
10 . The semiconductor structure of claim 7 , wherein the substrate comprises gold, silver, silicon dioxide, or aluminum.
11 . The semiconductor structure of claim 7 , wherein the self-assembled nucleic acids comprise self-assembled multi-stranded nucleic acids, self-assembled scaffolded nucleic acids, self-assembled single-stranded nucleic acids, or combinations thereof.
12 . A semiconductor structure comprising:
a substrate comprising at least one feature having at least one feature dimension of less than about 50 nm, the at least one feature formed on the substrate by a process comprising:
forming a mask comprising a pattern of self-assembled nucleic acids on a substrate;
exposing the pattern of self-assembled nucleic acids on the substrate to at least one repair enzyme to repair defects in the self-assembled nucleic acids; and
forming the at least one feature on portions of the substrate exposed through the mask.
13 . The semiconductor structure of claim 12 , wherein the at least one feature dimension is less than about 40 nm.
14 . The semiconductor structure of claim 12 , wherein the at least one feature dimension is less than about 30 nm.
15 . The semiconductor structure of claim 12 , wherein the at least one feature dimension is less than about 20 nm.
16 . The semiconductor structure of claim 12 , wherein the at least one feature dimension is less than about 10 nm.
17 . The semiconductor structure of claim 12 , wherein the at least one feature comprises at least one of a silicon nanowire, a gold nanoparticle, a semiconductive quantum dot, or a fluorescent quantum dot.