IP Library Granted Patent US 9,891,864
Granted Patent B2
US 9,891,864 · App. 15/000,812 · Granted Feb 13, 2018

Non-volatile memory module architecture to support memory error correction

Inventors: George Pax (Boise, ID); Jonathan Parry (Boise, ID)
Assignee: Micron Technology, Inc.
G06F3/0656G06F3/061G06F3/0619G06F3/0685G06F3/0688G06F11/1072G11C5/141G11C7/10G11C8/00G11C29/52
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 9,891,864
App. No.
15/000,812
Granted
Feb 13, 2018
Kind
B2
Abstract

Apparatus and methods are provided for operating a non-volatile memory module. In an example, a method can include filling a first plurality of pages of a first non-volatile memory with first data from a first data lane that includes a first volatile memory device, and filling a second plurality of pages of the first non-volatile memory device with second data from a second data lane that includes a second volatile memory device. In certain examples, the first plurality of pages does not include data from the second data lane.

Claims (38)

1. A method comprising:

filling a first plurality of pages of a first non-volatile memory with first data from a first data lane associated with a first volatile memory device; and

filling a second plurality of pages of the first non-volatile memory device with second data from a second data lane associated with a second volatile memory device;

wherein the first plurality of pages does not include the data from the second data lane; and

wherein each of the first plurality of pages is configured to include only information received from the first data lane to preserve chip kill functionality.

2. The method of claim 1 , further comprising providing host command and address information from a host so that each of the first volatile memory device and the second volatile memory device perform normal operations in response to the host command and address information, and wherein each of the filling the first plurality of pages and the filling the second plurality of pages is performed in response to a command and address information provided from a memory controller that is distinct from the host.

3. The method of claim 2 , further comprising selecting one of the host command and address information and the command and address information provided from the memory controller by a command and address multiplexer.

4. The method of claim 1 , further comprising filling a third plurality of pages of the first non-volatile memory with error correction code information from an error correction data lane that includes a third volatile memory device, wherein the third plurality of pages is distinct from the first plurality of pages and from the second plurality of pages.

5. The method of claim 4 , wherein the third plurality of pages is configured to include only error correction code information received from the error correction data lane to preserve chip kill functionality.

6. The method of claim 1 , wherein first data and the second data is transferred to the first non-volatile memory through at least a common data bus.

7. The method of claim 1 , wherein the first data is transferred to the first non-volatile memory through at least a first data bus, the second data is transferred to the first non-volatile memory through at least second data bus, and the first data bus and the second data bus are distinct.

8. The method of claim 1 , wherein each of the first data and the second data includes lower data bits and upper data bits, each of the first pages of the first non-volatile memory is configured to be filled with the lower data bits of the first data and each of the second pages of the first non-volatile memory is configured to be filled with the lower data bits of the second data, and the method further comprises;

filling a plurality of first pages of a second non-volatile memory with the upper data bits of the first data, and

filling a plurality of second pages of the second non-volatile memory with the upper data bits of the second data.

9. The method of claim 1 , wherein each of the second plurality of pages is configured to include only information received from the second data lane to preserve chip kill functionality.

10. A memory system comprising:

a non-volatile memory including a plurality of memory pages;

a plurality of volatile memory devices arranged in plurality of data lanes, each of the volatile memory devices being associated with one data lane of the plurality of data lanes;

a controller configured to store data to the plurality of memory pages of the non-volatile memory such that each of the plurality memory pages includes data provided from a single data lane of the plurality of data lanes without including data from others of the plurality of data lanes; and

wherein each of a first plurality of memory pages of the plurality of memory pages is configured to include only information received from a first data lane of the plurality of data lanes to preserve chip kill functionality.

11. The memory system of claim 10 , wherein one or ones of the volatile memory devices is configured to hold error correction code information and the rest of the volatile memory devices do not hold any error correction code information.

12. The memory system of claim 10 , further comprising:

a plurality of first external connectors configured to receive first control information; and

a register, and

wherein the controller is configured to provide second control information, and the register is configured to control operations of the volatile memory devices in response to selected one of the first control information and the second control information.

13. The memory system of claim 10 , wherein each of the data lanes includes a data multiplexer coupled to a respective volatile memory device.

14. The memory system of claim 10 , wherein each of the data lanes includes a data buffer coupled to a respective volatile memory device.

15. The memory system of claim 10 , further comprising a single printed-circuit board, and wherein the non-volatile memory, the volatile memory devices and the controller are mounted on the single printed-circuit board.

16. The memory system of claim 15 , further comprising a backup power source mounted on the single printed-circuit board and configured to provide a power to the non-volatile memory, the volatile memory device and the controller.

17. A system comprising:

a processor configured to perform an error correction operation on data; and

a memory module coupled to the processor and configured to provide the data to the processor in a first operation mode, the memory module comprising;

a non-volatile memory including a plurality of memory pages;

a plurality of volatile memory devices configured to provide the data to the processor, the volatile memory devices being arranged in plurality of data lanes, each of the volatile memory device s being associated with one data lane of the plurality of data lanes; and

a controller configured to store the data to the plurality of memory pages of the non-volatile memory in a second operation mode such that each of the plurality memory pages includes data provided from a single data lane of the plurality of data lanes without including data from others of the plurality of data lanes; and

wherein the error correction operation includes a chip kill operation.

18. The system of claim 17 , wherein the memory module further comprises a single printed-circuit board, and the non-volatile memory, the volatile memory devices and the controller are mounted on the single printed-circuit board.

19. The system of claim 18 , wherein the memory module further comprises a backup power source mounted on the single printed-circuit board and configured to provide a power to the non-volatile memory, the volatile memory device and the controller.

Assignments (9)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 14, 2023
From: MICRON TECHNOLOGY, INC.
To: LODESTAR LICENSING GROUP, LLC
Reel/Frame 064901/0011 →
RELEASE OF SECURITY INTEREST Recorded Nov 12, 2019
From: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.; MICRON SEMICONDUCTOR PRODUCTS, INC.
Reel/Frame 051028/0001 →
RELEASE OF SECURITY INTEREST Recorded Oct 9, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.
Reel/Frame 050937/0001 →
RELEASE OF SECURITY INTEREST Recorded Aug 23, 2018
From: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.
Reel/Frame 047243/0001 →
SECURITY INTEREST Recorded Jul 13, 2018
From: MICRON TECHNOLOGY, INC.; MICRON SEMICONDUCTOR PRODUCTS, INC.
To: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
Reel/Frame 047540/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REPLACE ERRONEOUSLY FILED PATENT #7358718 WITH THE CORRECT PATENT #7358178 PREVIOUSLY RECORDED ON REEL 038669 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY INTEREST. Recorded Jun 8, 2017
From: MICRON TECHNOLOGY, INC.
To: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT
Reel/Frame 043079/0001 →
PATENT SECURITY AGREEMENT Recorded Jun 2, 2016
From: MICRON TECHNOLOGY, INC.
To: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
Reel/Frame 038954/0001 →
SECURITY INTEREST Recorded May 12, 2016
From: MICRON TECHNOLOGY, INC.
To: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT
Reel/Frame 038669/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 11, 2016
From: PAX, GEORGE; PARRY, JONATHAN
To: MICRON TECHNOLOGY, INC.
Reel/Frame 037717/0155 →
Continuity (1)
Related Publication 20170206036A1 · Jul 20, 2017