Semiconductor memory and method for operating the same
A semiconductor memory may include: a storage unit suitable for storing a minimum operation interval between row command operations, a detection unit suitable for detecting whether row command signals inputted for the row command operations are activated at the minimum operation interval, a latching unit suitable for generating flag signals by latching the row command signals, and a shifting unit suitable for shifting the flag signals based on the minimum operation interval in response to an output signal of the detection unit, and generating an internal row command signals.
1. A memory system comprising:
a semiconductor memory including a plurality of latching units for receiving and latching a command, and suitable for outputting information regarding number of the latching units; and
a controller suitable for receiving the information regarding the number of the latching units from the semiconductor memory, and adjusting number of commands inputted to the semiconductor memory during a predetermined command input interval, in response to the information regarding the number of the latching units.
2. The memory system of claim 1 , wherein the semiconductor memory comprises:
a storage unit suitable for storing a minimum operation interval between command operations performed in response to the commands;
a detection unit suitable for detecting whether the commands are activated at the minimum operation interval;
a latching unit suitable for generating flag signals by latching the commands; and
a shifting unit suitable for shifting the flag signals based on the minimum operation interval in response to an output signal of the detection unit, and generating internal commands.
3. The memory system of claim 2 , wherein the row command signals comprise active command signals.
4. The memory system of claim 3 , wherein the minimum operation interval indicates an interval between an operation of activating a bank and another operation of activating another bank, in response to the active command signals inputted successively.
5. The memory system of claim 4 , further comprising:
a bank control unit suitable for controlling the row command operations of the banks in response to the internal row command signals.
6. The memory system of claim 1 , wherein the semiconductor memory comprises:
a storage unit suitable for storing a minimum operation interval between a row command operation and a column command operation corresponding to the row command operation;
a detection unit suitable for detecting whether a row command signal inputted for the row command operation and a column command signal inputted for the column command operation are activated at the minimum operation interval;
a latching unit suitable for generating flag signals by latching the row command signal and the column command signal; and
a shifting unit suitable for shifting the flag signals based on the minimum operation interval in response to an output signal of the detection unit, and generating internal command signals.
7. The semiconductor memory of claim 6 , wherein the row command signal is an active command signal, and the column command signal is a read or write command signal.
8. The semiconductor memory of claim 7 , wherein the minimum operation interval indicates an interval between an operation of activating a bank in response to the active command and another operation of reading or writing data from or in an activated bank in response to the read or write command signal.
9. The semiconductor memory of claim 8 , further comprising:
a bank control unit suitable for controlling the row command operation and the column command operation of the bank in response to the internal command signals.