Tensile strained semiconductor photon emission and detection devices and integrated photonics system
Tensile strained germanium is provided that can be sufficiently strained to provide a nearly direct band gap material or a direct band gap material. Compressively stressed or tensile stressed stressor materials in contact with germanium regions induce uniaxial or biaxial tensile strain in the germanium regions. Stressor materials may include silicon nitride or silicon germanium. The resulting strained germanium structure can be used to emit or detect photons including, for example, generating photons within a resonant cavity to provide a laser.
1. An optical system, comprising a light amplification element included within at least one group IV semiconductor material region, the group IV semiconductor material region in contact with and surrounded, in a plane, by a single tensile stressor region, the single tensile stressor region inducing biaxial tensile strain within at least a portion of the group IV semiconductor material region, wherein the portion of the group IV semiconductor material region including the light amplification element is located in an optical path defined by a waveguide, the optical path arranged so that light is optically coupled between the light amplification element and the waveguide.
2. The optical system of claim 1 , wherein the group IV semiconductor material region and the waveguide are comprised of the same group IV semiconductor.
3. The optical system of claim 2 , wherein the group IV semiconductor comprises germanium.
4. The optical system of claim 1 , wherein the tensile stressor region comprises silicon germanium.
5. The optical system of claim 1 , wherein the tensile stressor region comprises silicon germanium.
6. The optical system of claim 1 , wherein the optical path includes a first mirror and a second mirror that define a laser cavity.
7. The optical system of claim 6 , wherein the first mirror and the second mirror are distributed Bragg reflectors and wherein the laser cavity incorporates the at least one group IV semiconductor region.
8. The optical system of claim 7 , wherein the laser cavity is disposed at least partially within the waveguide.
9. An optical element comprising a first semiconductor material region, the first semiconductor material region in contact with and surrounded, in a plane, by a tensile stressor region that induces tensile strain along a strain orientation within at least a portion of the first semiconductor material region.
10. The optical element of claim 9 wherein first semiconductor material region comprises group IV semiconductor.
11. A p-i-n junction comprising p-type and n-type regions disposed adjacent an active region that includes at least one optical element of claim 10 .
12. The p-i-n junction of claim 11 , wherein the p-type and n-type regions are disposed on opposite sides of the active region.
13. A light-detecting device comprising a plurality of elements, at least one of which comprises the p-i-n junction of claim 12 .
14. A light-emitting device comprising a plurality of elements, at least one of which comprises the p-i-n junction of claim 12 .
15. The p-i-n junction of claim 12 wherein the active region is nominally undoped.
16. The optical element of claim 10 wherein the group IV semiconductor includes germanium.
17. The optical element of claim 16 wherein a junction is located adjacent the portion of the group IV semiconductor, the junction having a first side with a first majority carrier type and a second side with a second majority carrier type; and the optical element further comprises first and second contacts coupled respectively to the first side of the junction and the second side of the junction.
18. A light-detecting device comprising a plurality of elements, at least one of which comprises the optical element of claim 9 .
19. A light-emitting device comprising a plurality of elements, at least one of which comprises the optical element of claim 9 .
20. An optical element comprising a group IV semiconductor region in contact with and surrounded by a single tensile stressor region within a common plane with the group IV semiconductor region, the single tensile stressor region inducing biaxial tensile strain within at least a portion of the group IV semiconductor region; and a first edge-relaxed compressive stressor region disposed above the group IV semiconductor region, the first edge-relaxed compressive stressor region inducing biaxial tensile strain within the group IV semiconductor region.