IP Library Granted Patent US 10,537,858
Granted Patent B2
US 10,537,858 · App. 15/002,102 · Granted Jan 21, 2020

Hydrophilic, light active coating for membranes

Inventors: Seth B. Darling (Chicago, IL); Anna Lee (Darien, IL); Jeffrey W. Elam (Elmhurst, IL); Joseph A. Libera (Clarendon Hills, IL)
Assignee: UChicago Argonne, LLC
B01D69/125B01D61/027B01D61/145B01D61/147B01D67/0093B01D69/02B01D69/12B01D71/022B01D71/024B01D71/16C02F1/442C02F1/444B01D2323/02B01D2323/40B01D2323/46B01D2325/10B01D2325/36C02F2101/30C02F2303/20C02F2305/10
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Quick Facts
Patent No.
US 10,537,858
App. No.
15/002,102
Granted
Jan 21, 2020
Kind
B2
Abstract

A porous membrane provides enhanced filtration of pollutants and particles by coating the membrane with conformal thin films of doped titanium dioxide via atomic layer deposition or, alternatively, sequential infiltration synthesis. The membrane can either be organic or inorganic, and the doping of the membrane, usually with nitrogen, is an important feature that shifts the optical absorption of the TiO 2 from the UV range into the visible-light range. This enables the use of lower energy light, including sunlight, to activate the photocatalytic function of the film. The coating described in the present invention is compatible with virtually any porous membrane and allows for precise tuning of the pore size with molecular precision. The present invention presents a new coating process and chemical structure that provides catalytic activity, strongly enhanced by light, to both mitigate fouling and break down various organic pollutants in the process stream.

Claims (20)

1. A method of fabricating a hydrophilic, light active membrane, comprising;

providing a membrane comprising a base material;

loading the membrane into a chamber;

coating the base material with an inorganic material coating comprising using a deposition method selected from the group consisting of atomic layer deposition (ALD) process or sequential infiltration synthesis (SIS) process, with the at least one of the ALD process or SIS process including a supercycle of:

deposition of undoped TiO 2 layer by a one or more undoped deposition cycle of:

exposing the membrane to a first titanium precursor for a first predetermined time and a first partial pressure, the first titanium precursor depositing on or infiltrating at least a portion of the base material and binding with the base material,

purging the chamber using a first inert gas and for a first purge time,

exposing the membrane to a second co-reactant precursor for a second predetermined time and a second partial pressure, the second co-reactant precursor reacting with the bound first titanium precursor, thereby forming the undoped TiO 2 on the base material, the inorganic material growing on or infiltrating at least the portion of the base material, and

purging the chamber using a second inert gas and for a second purge time;

deposition of doped TiO 2 layer by a one or more doped deposition cycle of:

exposing the membrane to a second titanium precursor for a third predetermined time and a third partial pressure, the second titanium precursor depositing on or infiltrating at least a portion of the base material and binding with the base material,

purging the chamber using a third inert gas and for a third purge time,

exposing the membrane to a NH 4 OH for a fourth predetermined time and a fourth partial pressure, the NH 4 OH reacting with the second titanium precursor, thereby forming the doped TiO 2 , and

purging the chamber using a fourth inert gas and for a fourth purge time wherein the supercycle is repeated forming the inorganic coating having alternating layers of undoped TiO 2 and doped TiO 2 .

2. The method of claim 1 , wherein the base material includes at least one of a ceramic, a metal, a metal oxide, a metal nitride, a metal sulfide, metal chalcogenide, a metal carbide or a metal phosphide.

3. The method of claim 1 , wherein the first predetermined time is 0.75 seconds and the second predetermined time is 0.25 seconds.

4. The method of claim 1 , wherein the second titanium precursor is TiCl 4 .

5. The method of claim 1 , wherein the first titanium precursor is the same as the second titanium precursor.

6. The method of claim 1 , wherein the number of deposition cycles of the ALD process is between 300 and 600 cycles.

7. The method of claim 1 , wherein the number of deposition cycles of the SIS process is between 1 and 10 cycles.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 11, 2019
From: DARLING, SETH B.; ELAM, JEFFREY W.; LEE, ANNA; LIBERA, JOSEPH A.
To: UCHICAGO ARGONNE, LLC
Reel/Frame 048856/0141 →
CONFIRMATORY LICENSE Recorded Jul 7, 2016
From: UCHICAGO ARGONNE, LLC
To: ENERGY, UNITED STATES DEPARTMENT OF
Reel/Frame 039303/0226 →
Continuity (1)
Related Publication 20170203258A1 · Jul 20, 2017
Cited By (1)
US 12,619,025