Method and apparatus for electron beam lithography
View Patent ↗Disclosed is an apparatus in a semiconductor lithography system. The apparatus comprises a multiplexer and a plurality of imaging elements. The plurality is configured into a shift chain and an output of the shift chain is coupled to a data input of the multiplexer.
1. An apparatus in a semiconductor lithography system, comprising:
a first multiplexer; and
a first plurality of imaging elements, wherein the first plurality is configured into a first shift chain and an output of the first shift chain is coupled to a data input of the first multiplexer.
2. The apparatus of claim 1 , wherein the first shift chain is a bidirectional shift chain.
3. The apparatus of claim 1 , wherein each of the imaging elements is an electron beam (e-beam) mirror.
4. The apparatus of claim 1 , further comprising:
a second multiplexer; and
a second plurality of imaging elements, wherein the second plurality is configured into a second shift chain and an output of the second shift chain is coupled to a data input of the second multiplexer, wherein another data input of the first multiplexer and another data input of the second multiplexer are connected to a common node.
5. The apparatus of claim 4 , wherein the first plurality and the second plurality comprise the same number of imaging elements.
6. The apparatus of claim 1 , further comprising a node that is coupled to inputs of the first plurality for deactivating the first plurality.
7. The apparatus of claim 6 , wherein the node is further coupled to a select input of the first multiplexer.
8. The apparatus of claim 1 , further comprising a second plurality of imaging elements, wherein a data input of the first plurality and a data input of the second plurality are configured to receive image data for collectively imaging a semiconductor wafer.
9. The apparatus of claim 8 , wherein one of the first plurality is defective and at least a portion of the second plurality is configured to substitute the first plurality.
10. A digital pattern generator (DPG) in a semiconductor lithography system using electron beam (e-beam), comprising:
a first multiplexer;
a first plurality of e-beam mirrors, wherein the first plurality is configured into a first shift chain and an output of the first shift chain is coupled to a data input of the first multiplexer;
a second multiplexer; and
a second plurality of e-beam mirrors, wherein the second plurality is configured into a second shift chain and an output of the second shift chain is coupled to a data input of the second multiplexer, wherein another data input of the first multiplexer and another data input of the second multiplexer are connected to a common node.
11. The DPG of claim 10 , wherein the first and second shift chains are connected to form a common shift chain through at least one of: the first multiplexer and the second multiplexer.
12. The DPG of claim 10 , wherein the first plurality and the second plurality comprise the same number of e-beam mirrors.
13. The DPG of claim 10 , further comprising:
a first node that is coupled to inputs of the first plurality for deactivating the first plurality; and
a second node that is coupled to inputs of the second plurality for deactivating the second plurality, wherein the first and second nodes are different nodes.
14. The DPG of claim 13 , wherein the first node is further coupled to a select input of the first multiplexer, and the second node is further coupled to a select input of the second multiplexer.
15. The DPG of claim 10 , further comprising a third plurality of e-beam mirrors, wherein a data input of the first plurality and a data input of the third plurality are configured to receive different image data.
16. A digital pattern generator (DPG) in a semiconductor lithography system using electron beam (e-beam), comprising:
a multiplexer;
a first plurality of e-beam mirrors, wherein the first plurality of e-beam mirrors is configured into a first shift chain, and an output of the first shift chain is coupled to a data input of the multiplexer; and
a second plurality of e-beam mirrors configured into a second shift chain, wherein:
when the first plurality is used for imaging a semiconductor wafer, the second plurality is not used for imaging the semiconductor wafer; and
when the first plurality is not used for imaging a semiconductor wafer, the second plurality is used for imaging the semiconductor wafer.
17. The DPG of claim 16 , further comprising a node that is coupled to inputs of the first plurality for deactivating the first plurality.
18. The DPG of claim 17 , wherein the node is further coupled to a select input of the multiplexer.
19. The DPG of claim 18 , wherein another data input of the multiplexer is configured to receive image data.
20. The DPG of claim 16 , wherein the first and second pluralities comprise the same number of e-beam mirrors.