METHOD FOR MANUFACTURING SPUTTERING TARGET, METHOD FOR FORMING OXIDE FILM, AND TRANSISTOR
A method for manufacturing a sputtering target with which an oxide semiconductor film with a small amount of defects can be formed is provided. Alternatively, an oxide semiconductor film with a small amount of defects is formed. A method for manufacturing a sputtering target is provided, which includes the steps of: forming a polycrystalline In-M-Zn oxide (M represents a metal chosen among aluminum, titanium, gallium, yttrium, zirconium, lanthanum, cesium, neodymium, and hafnium) powder by mixing, sintering, and grinding indium oxide, an oxide of the metal, and zinc oxide; forming a mixture by mixing the polycrystalline In-M-Zn oxide powder and a zinc oxide powder; forming a compact by compacting the mixture; and sintering the compact.
1 . (canceled)
2 . A method for manufacturing a sputtering target, comprising the steps of:
forming a polycrystalline In-M-Zn oxide powder, M representing a metal selected from the group consisting of aluminum, titanium, yttrium, zirconium, lanthanum, cesium, neodymium, and hafnium, by mixing, sintering, and grinding indium oxide, an oxide of the metal, and zinc oxide;
forming a mixture by mixing the polycrystalline In-M-Zn oxide powder and a zinc oxide powder;
forming a compact by compacting the mixture; and
sintering the compact,
wherein an atomic ratio of zinc in the sputtering target is higher than an atomic ratio of M in the sputtering target.
3 . The method for manufacturing a sputtering target according to claim 2 ,
wherein the polycrystalline In-M-Zn oxide powder is formed from a homologous compound of an In-M-Zn oxide.
4 . The method for manufacturing a sputtering target according to claim 2 ,
wherein the atomic ratio of zinc in the sputtering target is higher than an atomic ratio of indium in the sputtering target.
5 . A method for manufacturing a sputtering target, comprising the steps of:
forming a polycrystalline In-M-Zn oxide powder from a homologous compound of an In-M-Zn oxide, M representing a metal selected from the group consisting of aluminum, titanium, yttrium, zirconium, lanthanum, cesium, neodymium, and hafnium, forming a mixture by mixing the polycrystalline In-M-Zn oxide powder and a zinc oxide powder;
forming a compact by compacting the mixture; and
sintering the compact,
wherein an atomic ratio of zinc in the sputtering target is higher than an atomic ratio of M in the sputtering target.
6 . The method for manufacturing a sputtering target according to claim 5 ,
wherein the atomic ratio of zinc in the sputtering target is higher than an atomic ratio of indium in the sputtering target.
7 . A method for manufacturing a sputtering target, comprising the steps of:
forming a polycrystalline In—Ga—Zn oxide powder by mixing, sintering, and grinding indium oxide, gallium oxide, and zinc oxide;
forming a mixture by mixing the polycrystalline In—Ga—Zn oxide powder and a zinc oxide powder;
forming a compact by compacting the mixture; and
sintering the compact,
wherein an atomic ratio of zinc in the sputtering target is higher than an atomic ratio of Ga in the sputtering target.
8 . The method for manufacturing a sputtering target according to claim 7 ,
wherein the polycrystalline In—Ga—Zn oxide powder is formed from a homologous compound of an In—Ga—Zn oxide.
9 . The method for manufacturing a sputtering target according to claim 7 ,
wherein the atomic ratio of zinc in the sputtering target is higher than an atomic ratio of indium in the sputtering target.
10 . A method for manufacturing a sputtering target, comprising the steps of:
forming a polycrystalline In—Ga—Zn oxide powder from a homologous compound of an In—Ga—Zn oxide;
forming a mixture by mixing the polycrystalline In—Ga—Zn oxide powder and a zinc oxide powder;
forming a compact by compacting the mixture; and
sintering the compact,
wherein an atomic ratio of zinc in the sputtering target is higher than an atomic ratio of Ga in the sputtering target.
11 . The method for manufacturing a sputtering target according to claim 10 ,
wherein the atomic ratio of zinc in the sputtering target is higher than an atomic ratio of indium in the sputtering target.