Method for producing metal oxide film and method for producing transistor

1. A method of producing a metal oxide film, the method comprising:

an application step of applying a solution containing an organic metal complex onto a substrate to form a resultant coating film;

an ozone exposure step of exposing the resultant coating film to ozone; and

a heating step of heating the resultant coating film that was exposed to the ozone to form the metal oxide film, wherein the heating is performed at a heating temperature of 180° C. or less.

2. The method of producing the metal oxide film according to claim 1 , wherein the ozone exposure step comprises selectively exposing the resultant coating film to the ozone, and

the method further comprises, after the ozone exposure step, a washing step of bringing the resultant coating film that was selectively exposed to the ozone into contact with an organic solvent.

3. The method of producing the metal oxide film according to claim 1 , wherein the organic metal complex comprises at least one kind of metal complex having a total carbon number of from 4 to 30 in one molecule.

4. The method of producing the metal oxide film according to claim 1 , wherein:

the organic metal complex comprises an acetylacetonate metal complex; and

a solvent in the solution containing the organic metal complex comprises at least one kind selected from an alcohol, a ketone, an ether, a halogenated hydrocarbon, and a cyclic hydrocarbon.

5. The method of producing the metal oxide film according to claim 1 , wherein the metal oxide film contains at least four elements of Al, O, C, and H, and a total composition ratio of C and H is 70% or more with respect to the four elements.

6. The method of producing the metal oxide film according to claim 2 , wherein the organic solvent to be used in the washing step comprises at least one kind selected from an alcohol, a ketone, an ether, a halogenated hydrocarbon, and a cyclic hydrocarbon.

7. A method of manufacturing a transistor, the method comprising:

forming a gate electrode on a substrate;

applying a solution containing an organic metal complex onto the substrate to form a resultant coating film;

selectively exposing the resultant coating film to ozone;

washing the substrate with an organic solvent;

baking the resultant coating film that was selectively exposed to the ozone, to obtain an insulating film, wherein the baking is performed at a baking temperature of 180° C. or less; and

forming a source electrode, a drain electrode, and a semiconductor layer.