Selective deposition
Methods are provided for selectively depositing a surface of a substrate relative to a second, different surface. An exemplary deposition method can include selectively depositing a material, such as a material comprising nickel, nickel nitride, cobalt, iron, and/or titanium oxide on a first surface, such as a SiO 2 surface, relative to a second, different surface, such as a H-terminated surface, of the same substrate. Methods can include treating a surface of the substrate to provide H-terminations prior to deposition.
1. A deposition method comprising:
providing a substrate comprising a first surface and a second, chemically different surface, wherein the first surface comprises at least one AH x termination, where A is one or more of N, O, or S and x is from 1 to 2, and the second surface comprises Si—H X terminations surface, where x is from 1 to 3; and
contacting the first surface and the second surface of the substrate with a first vapor phase precursor comprising Ni, Ti, Fe, or Co;
thereby selectively depositing a material comprising Ni, Ti, Fe, or Co on the first surface of the substrate relative to the second surface of the same substrate.
2. The method of claim 1 , wherein the selectively deposited material comprises Ni or Co.
3. The method of claim 1 , wherein selectively depositing further comprises contacting the substrate with a second vapor phase reactant.
4. The method of claim 1 , wherein the second surface comprising Si—H x terminations is formed by treating at least a portion of the substrate surface prior to depositing the material.
5. The method of claim 1 , wherein the second surface comprising Si—H x terminations is formed by treating at least a portion of the substrate surface with a HF etch.
6. The method of claim 1 , wherein the second surface comprising Si—H x terminations is formed by treating at least a portion of the substrate surface with a silicon compound comprising ClSiH 3 or (R I R II N)SiH 3 , where R I and R II are independently selected from C 1 -C 4 alkyls, such as methyl, ethyl, n-propyl, i-propyl, n-butyl, i-butyl.
7. The method of claim 1 , wherein the first surface comprises at least one OH-termination.
8. The method of claim 1 , wherein the first surface comprises SiO 2 .
9. The method of claim 1 , wherein the first surface is a low-k insulator.
10. The method of claim 1 , wherein the first surface comprises silicon oxide, silicon nitride, silicon oxynitride, fluorinated silica glass, carbon doped silicon oxide, or another material comprising at least 50% silicon oxide.
11. The method of claim 1 , wherein the material comprising Ni, Ti, Fe, or Co is selectively deposited on the first surface relative to the second surface comprising Si—H x terminations with a selectivity of at least 90%.
12. The method of claim 1 , further comprising etching the substrate to remove any material comprising Ni, Ti, Fe, or Co from the second H-terminated silicon surface of the substrate.
13. The method of claim 1 , wherein the deposition method is an ALD or CVD process.
14. The method of claim 13 , wherein the selective deposition process is an ALD process.
15. A method of selectively depositing a material comprising Ni, Ti, Fe, or Co on a substrate, the method comprising:
providing a substrate comprising a first surface comprising silicon oxide;
etching at least a portion of the first surface to thereby provide a second H-terminated silicon surface; and
selectively depositing a material comprising Ni, Ti, Fe, or Co on the first surface comprising silicon oxide relative to the second H-terminated silicon surface.
16. The method of claim 15 , wherein the method of selectively depositing a material comprising Ni, TI, Fe, or Co on a substrate is an ALD or CVD process.
17. The method of claim 15 , wherein etching at least a portion of the first surface comprises exposing said portion of the first surface to HF.
18. The method of claim 15 , wherein the material comprising Ni, Ti, Fe, or Co film is selectively deposited on the first surface relative to the second H-terminated silicon surface with a selectivity of at least 90%.
19. A method for selectively forming SiO 2 on a substrate comprising:
selectively depositing material comprising Ni, Ti, Fe, or Co on a first surface of the substrate relative to a second H-terminated silicon surface of the same substrate, wherein the first surface comprises at least an AH x termination, where A is one or more of O, N and S and x is from 1 to 2;
selectively depositing SiO 2 on the second H-terminated silicon surface of the substrate relative to the first surface of the same substrate.
20. The method of claim 19 , wherein the first surface comprises an OH-terminated surface.
21. The method of claim 19 , wherein the first surface comprises silicon oxide.
22. The method of claim 19 , wherein the second H-terminated silicon surface comprises —SiH, —SiH 2 , or —SiH 3 surface terminations.
23. The method of claim 19 , wherein SiO 2 is selectively deposited on the second H-terminated silicon surface of the substrate relative to the first surface by a PEALD or thermal ALD process.
24. The method of claim 19 , wherein the method further comprises etching the substrate to remove the material comprising Ni, Ti, Fe, or Co from the substrate.
25. The method of claim 24 , wherein etching the substrate comprises exposing the substrate to at least one of HCl, HNO 3 , or H 2 SO 4 :H 2 O 2 .