Light emitting device and method for manufacturing the same

1. A light emitting device comprising:

a first light transmissive support including a first light transmissive insulator and a first conductive circuit layer provided on a first surface of the first light transmissive insulator;

a second light transmissive support including a second light transmissive insulator and a second conductive circuit layer provided on a second surface of the second light transmissive insulator opposed to the first surface;

a plurality of light emitting diodes, arranged between the first light transmissive insulator and the second light transmissive insulator so that a minimum distance d is 500 μm or more, each including a first electrode electrically connecting to the first conductive circuit layer, and a second electrode electrically connecting to the second conductive circuit layer; and

a third light transmissive insulator embedded between the first light transmissive insulator and the second light transmissive insulator,

wherein the third light transmissive insulator has a minimum thickness T 2 between the plural light emitting diodes, which is smaller than a height T 1 of the light emitting diode by a range of 5 μm or more and ½ or less of the height T 1 , and

wherein a difference ΔT (T 1 −T 2 ) between the height T 1 of the light emitting diode and the minimum thickness T 2 of the third light transmissive insulator falls within a range surrounded by a straight line 1 expressed by ΔT=5, a straight line 2 expressed by d=500, a straight line 3 expressed by ΔT=0.09d, a straight line 4 expressed by ΔT=0.0267d+60, and a straight line 5 expressed by ΔT=½ T 1 , in a graph with the difference ΔT [unit:μm] plotted on a vertical axis and the minimum distance d [unit:μm] between the plural light emitting diodes plotted on a horizontal axis.

2. The light emitting device according to claim 1 ,

wherein the minimum distance d between the plural light emitting diodes is 1500 μm or less.

3. The light emitting device according to claim 1 ,

wherein the third light transmissive insulator has a Vicat softening temperature of 80° C. or higher and 160° C. or lower.

4. The light emitting device according to claim 1 ,

wherein the third light transmissive insulator has a tensile storage elastic modulus of 0.01 GPa or more and 10 GPa or less.

5. The light emitting device according to claim 1 ,

wherein a glass transition temperature of the third light transmissive insulator is −20° C. or lower.

6. The light emitting device according to claim 3 ,

wherein a melting temperature of the third light transmissive insulator is 180° C. or higher, or higher by 40° C. or more than the Vicat softening temperature.

7. The light emitting device according to claim 1 ,

wherein a contact interface between the first electrode or the second electrode and the conductive circuit layer has an electrical connection region where the electrode and the conductive circuit layer are in direct contact with each other and a mechanical coupling region where the electrode and the conductive circuit layer are coupled with each other with the third light transmissive insulator intervening therebetween.

8. The light emitting device according to claim 7 ,

wherein a contact surface of the electrode with the conductive circuit layer has a projecting and recessed shape, and a projection in the projecting and recessed shape is in direct contact with the conductive circuit layer to form the electrical connection region, and the third light transmissive insulator is filled in the recess in the projecting and recessed shape to form the mechanical coupling region.

9. The light emitting device according to claim 1 ,

wherein at least one of the first light transmissive insulator and the second light transmissive insulator has flexibility.

10. A light emitting device comprising:

a first light transmissive support including a first light transmissive insulator and a conductive circuit layer provided on a first surface of the first light transmissive insulator;

a second light transmissive support including a second light transmissive insulator;

a plurality of light emitting diodes, arranged between the first light transmissive insulator and the second light transmissive insulator so that a minimum distance d is 500 μm or more, each including a first electrode and a second electrode electrically connecting to the conductive circuit layer; and

a third light transmissive insulator embedded between the first light transmissive insulator and the second light transmissive insulator,

wherein the third light transmissive insulator has a minimum thickness T 2 between the plural light emitting diodes, which is smaller than a height T 1 of the light emitting diode by a range of 5 μm or more and ½ or less of the height T 1 , and

wherein a difference ΔT (T 1 −T 2 ) between the height T 1 of the light emitting diode and the minimum thickness T 2 of the third light transmissive insulator falls within a range surrounded by a straight line 1 expressed by ΔT=5, a straight line 2 expressed by d=500, a straight line 3 expressed by ΔT=0.09d, a straight line 4 expressed by ΔT=0.0267d+60, and a straight line 5 expressed by ΔT=½ T 1 , in a graph with the difference ΔT [unit:μm] plotted on a vertical axis and the minimum distance d [unit:μm] between the plural light emitting diodes plotted on a horizontal axis.

11. The light emitting device according to claim 10 ,

wherein the minimum distance d between the plural light emitting diodes is 1500 μm or less.

12. The light emitting device according to claim 10 ,

wherein the third light transmissive insulator has a Vicat softening temperature of 80° C. or higher and 160° C. or lower.

13. The light emitting device according to claim 10 ,

wherein the third light transmissive insulator has a tensile storage elastic modulus of 0.01 GPa or more and 10 GPa or less.

14. The light emitting device according to claim 10 ,

wherein a glass transition temperature of the third light transmissive insulator is −20° C. or lower.

15. The light emitting device according to claim 12 ,

wherein a melting temperature of the third light transmissive insulator is 180° C. or higher, or higher by 40° C. or more than the Vicat softening temperature.

16. The light emitting device according to claim 10 ,

wherein a contact interface between the first electrode or the second electrode and the conductive circuit layer has an electrical connection region where the electrode and the conductive circuit layer are in direct contact with each other and a mechanical coupling region where the electrode and the conductive circuit layer are coupled with each other with the third light transmissive insulator intervening therebetween.

17. The light emitting device according to claim 16 ,

wherein a contact surface of the electrode with the conductive circuit layer has a projecting and recessed shape, and a projection in the projecting and recessed shape is in direct contact with the conductive circuit layer to form the electrical connection region, and the third light transmissive insulator is filled in the recess in the projecting and recessed shape to form the mechanical coupling region.

18. The light emitting device according to claim 10 ,

wherein at least one of the first light transmissive insulator and the second light transmissive insulator has flexibility.

19. An apparatus comprising the light emitting device according to claim 1 .

20. An apparatus comprising the light emitting device according to claim 10 .