PROCESS OF MANUFACTURING PURE POROUS DIAMOND
There is provided a process for manufacturing a porous diamond having a tridimensional (3D) structure, the process comprising the steps of a) using a porous substrate with a defined porosity size to deposit and grow diamond material having a controlled thickness, thus forming a unit consisting of the 3D porous diamond coated on the porous substrate; and b) removing the porous substrate to obtain a pure synthetic porous 3D diamond.
1 . A process for manufacturing a porous diamond having a tridimensional (3D) structure, the process comprising the steps of:
a) using a porous substrate with a defined porosity size to deposit and grow diamond material having a controlled thickness, thus forming a unit consisting of the 3D porous diamond coated on the porous substrate; and
b) removing the porous substrate to obtain a pure synthetic porous 3D diamond.
2 . The process of claim 1 wherein the porous substrate is made from a material selected from metallic and non metallic material.
3 . The process according to claim 1 wherein the porous substrate material is selected from a group consisting of silicon, molybdenum, tungsten, titanium, silicon carbide, beryllium oxide, nickel, platinum, cobalt, iridium and iron.
4 . The process according to claim 3 , wherein the porous substrate material is selected from silicon, titanium, tungsten, platinum and cobalt, preferably titanium.
5 . The process according to claim 1 , wherein the pores of the substrate having spherical, cylindrical, tubular or rectangular geometry.
6 . The process according to claim 5 , wherein the pores of the substrate has a spherical geometry.
7 . The process according to claim 1 wherein the deposition of diamond on the porous substrate is performed using chemical vapor deposition CVD.
8 . The process according to claim 1 wherein the porous substrate is removed by a process selected from a thermal decomposition, oxidative decomposition, acidic etching and basic etching.
9 . The process according to claim 8 , wherein the porous substrate is removed by immersing the units as defined in claim 1 into a chemical solution for at least 2 hours a temperature ranging from room temperature to a temperature below the boiling point of the solution.
10 . The process according to claim 9 , wherein the chemical solution is an aqueous acidic solution.
11 . The process according to claim 9 , wherein the chemical solution is a hydrogen chloride solution or a sulphuric acid solution.
12 . The process according to claim 10 , wherein the concentration of the aqueous acidic solution is in the range of 1 to 10M.
13 . The process according to claim 8 , wherein the pure 3D porous diamond obtained is washed with water to remove any excess of the chemical solution and/or the substrate residues.
14 . The process according to claim 1 wherein the removal step b) is repeated one or more times to ensure the complete removal of the substrate, and wherein the 3D porous diamond is previously washed with water before repeating the removal process of step b).
15 . The process according to claim 1 wherein the obtained pure porous diamond is in the range of 1 cm to 10 cm in size.