Abrasive material, method for producing same, and abrasive slurry containing same
A polishing material including polishing abrasive grains, the polishing abrasive grain having a core material that includes a metal oxide, and a cover layer that is provided on a surface of the core material and includes an oxide of a metal, that is different from the core material, or an oxide of a semimetal. When the polishing abrasive grains are observed with a scanning electron microscope after boiling a slurry including the polishing abrasive grains for 5 hours, a ratio of a longitudinal axis to a lateral axis of the polishing abrasive grain is 1.0 or greater and less than 1.5. The polishing abrasive grain preferably has a mass ratio of the cover layer to the core material, cover layer/core material, of from 0.3 mass % to 30 mass % inclusive. The cover layer preferably has a thickness of from 0.2 nm to 500 nm inclusive.
1. A polishing material comprising polishing abrasive grains, the polishing abrasive grain having a core material that includes a metal oxide comprising a manganese oxide, and a cover layer that is provided on a surface of the core material and includes an oxide of a metal comprising silica, that is different from the core material, wherein
a ratio of a longitudinal axis to a lateral axis of the polishing abrasive grain is 1.0 or greater and less than 1.5,
the cover layer covers an entire region of the surface of the core material completely, and
the manganese oxide is manganese dioxide (MnO 2 ) having a β-crystal structure, manganese dioxide (MnO 2 ) having a λ-crystal structure, or manganese dioxide (MnO 2 ) having a γ-crystal structure.
2. The polishing material according to claim 1 , wherein the polishing abrasive grain has a mass ratio of the cover layer to the core material, cover layer/core material, of from 0.3 mass % to 30 mass % inclusive.
3. The polishing material according to claim 1 , wherein the cover layer has a thickness of from 0.2 nm to 500 nm inclusive.
4. The polishing material according to claim 1 , having an average particle size D 50 of from 0.08 μm to 3.0 μm inclusive.
5. The polishing material according to claim 1 , wherein the polishing material is used for polishing SiC.
6. A polishing slurry comprising the polishing material according to claim 1 .
7. A method for producing polishing abrasive grains of claim 1 , wherein the method comprises
depositing SiO 2 on the surface of the core material by adding an acid to a dispersion in which the core material including the metal oxide is dispersed in an aqueous solution including a silicate of an alkali metal.
8. A method for producing polishing abrasive grains of claim 1 , wherein the method comprises
depositing SiO 2 on the surface of the core material by adding a base to a dispersion in which the core material including the metal oxide is dispersed in an aqueous solution including silicic acid.
9. The polishing material according to claim 2 , wherein the cover layer has a thickness of from 0.2 nm to 500 nm inclusive.
10. The polishing material according to claim 2 , having an average particle size D 50 of from 0.08 μm to 3.0 μm inclusive.
11. The polishing material according to claim 3 , having an average particle size D 50 of from 0.08 μm to 3.0 μm inclusive.
12. The polishing material according to claim 1 , wherein the oxide included in the cover layer further comprises alumina, titania, zirconia, or an iron oxide.
13. The polishing material according to claim 2 , wherein the oxide included in the cover layer further comprises alumina, titania, zirconia, or an iron oxide.
14. The polishing material according to claim 3 , wherein the oxide included in the cover layer further comprises alumina, titania, zirconia, or an iron oxide.
15. The polishing material according to claim 4 , wherein the oxide included in the cover layer further comprises alumina, titania, zirconia, or an iron oxide.
16. The polishing material according to claim 1 , wherein the manganese oxide is selected from the group consisting of manganese (II) oxide (MnO), manganese (III) sesquioxide (Mn 2 O 3 ), manganese dioxide (MnO 2 ), and trimanganese tetraoxide (Mn 3 O 4 ).
17. The polishing material according to claim 1 , wherein 70% or more, in terms of the number of grains, of the polishing abrasive grains have a non-acicular form.
18. A method for producing a silicon carbide substrate, comprising:
polishing the silicon carbide substrate with the polishing material according to claim 1 .