Light emitting diodes and photodetectors

1. An integrated device comprising:

a substrate;

a light emitting diode formed on the substrate, comprising:

an undoped material layer;

an n-type material layer formed on a surface of the undoped material layer, a first surface of the n-type material layer having an n-type contact;

a material layer having at least one quantum well formed on a second surface of the n-type material layer;

a p-type material layer formed on a surface of the material layer having the at least one quantum well; and

a p-type contact formed on a surface of the p-type material layer;

a photodetector formed on the substrate, comprising:

an undoped material layer with an n-type material layer formed on a first portion of a surface of the undoped material layer and a Schottky contact formed on a second portion of the surface of the undoped material layer; and,

an n-type contact formed on a surface of the n-type material layer;

wherein the photodetector is separated from the light emitting diode by a distance; and,

wherein the photodetector is configured to be blind to emissions from the light emitting diode.

2. The integrated device of claim 1 , wherein the light emitting diode and the photodetector are formed with one or more layers comprising III-nitride.

3. The integrated device of claim 2 , wherein the one or more layers comprise at least one of gallium nitride (GaN) and indium gallium nitride (InGaN).

4. The integrated device of claim 1 , wherein the light emitting diode is configured to function as an optical transmitter and the photodetector is configured to function as an optical receiver.

5. The integrated device of claim 4 , wherein the light emitting diode is also configured to function as a solid-state light.

6. The integrated device of claim 1 , wherein the photodetector is capable of receiving signals and the light emitting diode is capable of transmitting signals without cross-talk.

7. The integrated device of claim 1 , wherein the light emitting diode is configured to emit wavelengths in the visible spectrum and the photodetector is configured to receive wavelengths in the ultraviolet spectrum.

8. The integrated device of claim 1 , wherein the photodetector comprises at least one of a pn junction photodetector, p-i-n junction photodetector, and a metal-semiconductor-metal photo detector.

9. The integrated device of claim 1 , wherein the Schottky contact is configured to form a Schottky barrier photodetector.

10. A device comprising:

a light emitting diode formed on a substrate, the light emitting diode comprising:

an undoped material layer;

an n-type material layer, a surface of the n-type material layer having an n-type contact;

a material layer having at least one quantum well;

a p-type material layer; and

a p-type contact;

wherein the light emitting diode is configured to function as both a solid state light and as an optical transmitter;

a photodetector formed on the substrate, the photodetector comprising:

an undoped material layer, at least a portion of which having an n-type material layer and a Schottky contact and,

an n-type contact;

wherein the photodetector is configured to be blind to emissions from the light emitting diode;

wherein the photodetector is separated from the light emitting diode by a distance.

11. The device of claim 10 , wherein the photodetector is configured to function as an optical receiver.

12. The device of claim 10 , wherein the photodetector is capable of receiving signals and the light emitting diode is capable of transmitting signals without cross-talk.

13. The device of claim 10 , wherein the light emitting diode is configured to emit wavelengths in the visible spectrum and the photodetector is configured to receive wavelengths in the ultraviolet spectrum.

14. The device of claim 10 , wherein the photodetector comprises at least one of a p-n junction photodetector, p-i-n junction photodetector, and a metal-semiconductor-metal photodetector.

15. The device of claim 10 , wherein the Schottky contact is configured to form a Schottky barrier photodetector.

16. An optical communication system comprising:

a first transmitting light emitting diode associated with a first receiving photodetector;

a second transmitting light emitting diode associated with a second receiving photodetector, wherein the first receiving photodetector is configured to be blind to the first light emitting diode and configured to receive emissions from the second light emitting diode, and wherein the second receiving photodetector is configured to be blind to the second light emitting diode and configured to receive emissions from the first light emitting diode.

17. The optical communication system of claim 16 , wherein the first light emitting diode is configured to emit light in the visible spectrum, wherein the first receiving photodetector is configured to receive light in the ultraviolet spectrum, wherein the second light emitting diode is configured to emit light in the ultraviolet spectrum, and wherein the second receiving photodetector is configured to receive light in the visible spectrum.

18. The optical communication system of claim 16 , wherein at least one of the first light emitting diode and second light emitting diode is also configured to function as a solid state light.

19. The optical communication system of claim 16 , wherein the first photodetector and second photodetector comprise a Schottky barrier photodetector.

20. The optical communication system of claim 16 , wherein the first light emitting diode and first receiving photodetector are formed on a first substrate, and wherein the first light emitting diode and first receiving photodetector are formed on a second substrate.