METHOD FOR MANUFACTURING THIN FILM
The present invention relates to a method for manufacturing a thin film, comprising the steps of: preparing a substrate; preparing a raw material comprising a compound consisting of SiH2, as a basic structure thereof, and a functional group, including at least one of carbon, oxygen, and nitrogen, linearly bonded to both sides of the basic structure; vaporizing the raw material, and loading the substrate into a chamber; and providing the vaporized raw material to the inside of the chamber. Furthermore, the present invention is capable of depositing a high-quality thin film under various processing conditions; manufacturing a thin film within a wide range of processing temperatures, processing pressures, etc.; and utilizing various methods and equipment for manufacturing a thin film.
1 . A method of manufacturing a thin film, the method comprising:
providing a substrate;
providing a raw material;
vaporizing the raw material and loading the substrate into a chamber;
supplying the vaporized raw material to an interior of the chamber;
wherein a reaction gas is supplied to the chamber during or before the vaporized raw material is supplied; and
wherein the raw material is a precursor comprising at least one of the following chemical formulae:
(where R is a functional group)
2 . The method of manufacturing a thin film according to claim 1 , wherein the reaction gas is reacted with the raw material to form a thin film and comprises at least one selected from an oxygen-containing gas, a nitrogen-containing gas, a hydrocarbon compound (CxHy, where 1≦x≦9, 4≦y≦20 and y>2x), a boron-containing gas and a silicon-containing gas.
3 . The method of manufacturing a thin film according to claim 2 , wherein the vaporized raw material is supplied together with a carrier gas comprising at least one selected from helium, argon and nitrogen.
4 . The method of manufacturing a thin film according to claim 3 , wherein the functional group of the raw material comprises at least one selected from a methyl group (—CH 3 ), an ethyl group (—C 2 H 5 ), a benzyl group (—CH 2 —C 6 H 5 ), a phenyl group (—C 6 H 5 ), an amine group (—NH 2 ), a nitro group (—NO), a hydroxyl group (—OH), a formyl group (—CHO) and a carboxyl group (—COOH).
5 . The method of manufacturing a thin film according to claim 4 , wherein a thin film formed on the substrate is an insulation film containing silicon.
6 . The method of manufacturing a thin film according to claim 5 , wherein the insulation film comprises at least one of an oxide film, a nitride film, a carbide film, an oxide-nitride film, a carbide-nitride film, a boride-nitride film, and a carbide-boride-nitride film.
7 . The method of manufacturing a thin film according to claim 1 , wherein plasma is generated in the chamber and a thin film-manufacturing temperature is controlled in a range of 80 to 250 degrees to form a silicon oxide film.
8 . The method of manufacturing a thin film according to claim 7 , wherein the silicon oxide film is formed using a C 4 H 12 Si raw material.
9 . The method of manufacturing a thin film according to claim 1 , wherein plasma is generated in the chamber and a thin film-manufacturing temperature is controlled in a range of 100 to 500 degrees to form a silicon nitride film.
10 . The method of manufacturing a thin film according to claim 9 , wherein the silicon nitride film is formed using a C 4 H 12 Si raw material.
11 . A method of manufacturing a thin film, the method comprising:
providing a substrate;
providing a raw material comprising a compound which has a basic structure of SiH 2 and functional groups comprising at least one of carbon, oxygen and nitrogen linearly coupled to both sides of the basic structure;
vaporizing the raw material and loading the substrate into a chamber; and
supplying the vaporized raw material to an interior of the chamber,
wherein a reaction gas is supplied to the chamber during or before the vaporized raw material is supplied.
12 . The method of manufacturing a thin film according to claim 11 , wherein the reaction gas is reacted with the raw material to form a thin film and comprises at least one selected from an oxygen-containing gas, a nitrogen-containing gas, a hydrocarbon compound (CxHy, where 1≦x≦9, 4≦y≦20 and y>2x), a boron-containing gas and a silicon-containing gas.
13 . The method of manufacturing a thin film according to claim 12 , wherein the vaporized raw material is supplied together with a carrier gas comprises at least one selected from helium, argon and nitrogen.
14 . The method of manufacturing a thin film according to claim 13 , wherein the functional group of the raw material comprises at least one selected from a methyl group (—CH 3 ), an ethyl group (—C 2 H 5 ), a benzyl group (—CH 2 —C 6 H 5 ), a phenyl group (—C 6 H 5 ), an amine group (—NH 2 ), a nitro group (—NO), a hydroxyl group (—OH), a formyl group (—CHO) and a carboxyl group (—COOH).
15 . The method of manufacturing a thin film according to claim 14 , wherein a thin film formed on the substrate is an insulation film containing silicon.
16 . The method of manufacturing a thin film according to claim 15 , wherein the insulation film comprises at least one of an oxide film, a nitride film, a carbide film, an oxide-nitride film, a carbide-nitride film, a boride-nitride film, and a carbide-boride-nitride film.
17 . The method of manufacturing a thin film according to claim 11 , wherein plasma is generated in the chamber and a thin film-manufacturing temperature is controlled in a range of 80 to 250 degrees to form a silicon oxide film.
18 . The method of manufacturing a thin film according to claim 17 , wherein the silicon oxide film is formed using a C 4 H 12 Si raw material.
19 . The method of manufacturing a thin film according to claim 11 , wherein plasma is generated in the chamber and a thin film-manufacturing temperature is controlled in a range of 100 to 500 degrees to form a silicon nitride film.
20 . The method of manufacturing a thin film according to claim 19 , wherein the silicon nitride film is formed using a C 4 H 12 Si raw material.