IP Library Granted Patent US 10,481,125
Granted Patent B2
US 10,481,125 · App. 15/026,657 · Granted Nov 19, 2019

Biomolecule measuring device

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Quick Facts
Patent No.
US 10,481,125
App. No.
15/026,657
Granted
Nov 19, 2019
Kind
B2
Abstract

To a biomolecule measuring apparatus, a semiconductor sensor for detecting ions generated by a reaction between a biomolecular sample and a reagent is set. The semiconductor sensor has a plurality of cells which are arranged on a semiconductor substrate, and each of which detects ions, and a plurality of readout wires. Each of the plurality of cells has an ISFET which has a floating gate and which detects ions, a first MOSFET M 2 for amplifying an output from the ISFET, and a second MOSFET M 3 which selectively transmits an output from the first MOSFET to a corresponding readout wire R 1 . Each of the plurality of cells is provided with a third MOSFET M 1 which generates hot electrons in the ISFET and which injects a charge to the floating gate of the ISFET. Here, the second MOSFET and the third MOSFET are separately controlled.

Claims (45)

1. A biomolecule measuring apparatus comprises a semiconductor sensor for detecting ions generated by a reaction between a biomolecular sample and a reagent,

wherein the semiconductor sensor comprises:

a semiconductor substrate;

a plurality of cells arranged in an array form on the semiconductor substrate, each of the plurality of cells is configured to detect ions; and

a plurality of readout wires arranged in the array formed by the plurality of cells,

wherein each of the plurality of cells comprises:

an ISFET comprising a floating gate and configured to detect a change in ion concentration;

a first MOSFET comprising a gate configured to receive an output from the ISFET and amplify the output from the ISFET;

a second MOSFET in series to the first MOSFET, configured to selectively transmit an output from the first MOSFET to a corresponding readout wire of the plurality of readout wires; and

a third MOSFET in series to the ISFET, configured to generate hot electrons in the ISFET and to inject a charge to the floating gate of the ISFET,

wherein the third MOSFET is controlled based on the output received from the ISFET, and wherein the second MOSFET and the third MOSFET are separately controlled; and

wherein the biomolecule measuring apparatus is configured to transmit the output from the ISFET to the corresponding readout wire and determine whether a threshold voltage of the ISFET is within a predetermined range, by controlling the second MOSFET.

2. The biomolecule measuring apparatus according to claim 1 ,

wherein the biomolecule measuring apparatus has a first operation mode which allows an electron tunneling current to flow from the floating gate of the ISFET in each of the plurality of cells to the semiconductor substrate.

3. The biomolecule measuring apparatus according to claim 1 ,

wherein the ions are generated by a first reaction between the biomolecular sample and the reagent and a second reaction different from the first reaction, and

the biomolecule measuring apparatus injects the charge to the floating gate so as to reduce a change in a threshold voltage of the ISFET caused by the ions generated by the second reaction.

4. The biomolecule measuring apparatus according to claim 3 ,

wherein the first reaction is caused by changing a temperature of the reagent.

5. The biomolecule measuring apparatus according to claim 1 , wherein prior to the operation for injecting the charge to the floating gate of the ISFET, the biomolecule measuring apparatus performs a second operation mode for allowing an electron tunneling current to flow from the floating gate of the ISFET in each of the plurality of cells to the semiconductor substrate.

6. The biomolecule measuring apparatus according to claim 1 ,

wherein the ISFET and third MOSFET are formed on a common substrate.

7. A biomolecule measuring apparatus comprises a semiconductor sensor for detecting ions generated by a reaction between a biomolecular sample and a reagent,

wherein the semiconductor sensor comprises:

a semiconductor substrate;

a plurality of cells arranged in an array form on the semiconductor substrate, each of the plurality of cells is configured to detect ions; and

a plurality of readout wires arranged in the array formed by the plurality of cells,

wherein each of the plurality of cells comprises:

an ISFET comprising a floating gate and configured to detect a change in ion concentration;

a first MOSFET comprising a gate configured to receive an output from the ISFET and amplify the output from the ISFET;

a second MOSFET in series to the first MOSFET, configured to selectively transmit an output from the first MOSFET to a corresponding readout wire of the plurality of readout wires;

a third MOSFET in series to the ISFET, configured to generate hot electrons in the ISFET and to inject a charge to the floating gate of the ISFET; and,

a fourth MOSFET connected to the ISFET, configured to prevent the application of a high voltage to the first MOSFET;

wherein the third MOSFET is controlled based on the output received from the ISFET, and wherein the second MOSFET and the third MOSFET are separately controlled; and

wherein the biomolecule measuring apparatus is configured to transmit the output from the ISFET to the corresponding readout wire and determine whether a threshold voltage of the ISFET is within a predetermined range, by controlling the second MOSFET.

8. The biomolecule measuring apparatus according to claim 7 ,

wherein the biomolecule measuring apparatus has a first operation mode which allows an electron tunneling current to flow from the floating gate of the ISFET in each of the plurality of cells to the semiconductor substrate.

9. The biomolecule measuring apparatus according to claim 7 ,

wherein the ions are generated by a first reaction between the biomolecular sample and the reagent and a second reaction different from the first reaction, and

the biomolecule measuring apparatus injects the charge to the floating gate so as to reduce a change in a threshold voltage of the ISFET caused by the ions generated by the second reaction.

10. The biomolecule measuring apparatus according to claim 9 ,

wherein the first reaction is caused by changing a temperature of the reagent.

11. The biomolecule measuring apparatus according to claim 7 , wherein prior to the operation for injecting the charge to the floating gate of the ISFET, the biomolecule measuring apparatus performs a second operation mode for allowing an electron tunneling current to flow from the floating gate of the ISFET in each of the plurality of cells to the semiconductor substrate.

12. The biomolecule measuring apparatus according to claim 7 ,

wherein the ISFET and third MOSFET are formed on a common substrate.

Assignments (2)
CHANGE OF NAME AND ADDRESS Recorded Mar 30, 2020
From: HITACHI HIGH-TECHNOLOGIES CORPORATION
To: HITACHI HIGH-TECH CORPORATION
Reel/Frame 052259/0227 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 21, 2016
From: KAWAHARA, TAKAYUKI; YANAGAWA, YOSHIMITSU; ITABASHI, NAOSHI; TAKEMURA, RIICHIRO
To: HITACHI HIGH-TECHNOLOGIES CORPORATION
Reel/Frame 038343/0713 →