Separating a wafer of light emitting devices

1. A method of separating a wafer of light emitting devices, the method comprising:

scribing a first groove on a dicing street on a surface of the wafer;

checking alignment of the wafer using a location of the first groove relative to a feature on the wafer; and

after checking alignment, scribing a second groove wider and deeper than the first groove over the first groove on the dicing street on the surface of the wafer.

2. The method of claim 1 further comprising breaking the wafer along the second groove.

3. The method of claim 1 wherein the first and second grooves are formed in a sapphire substrate.

4. The method of claim 3 wherein the sapphire substrate is at least 200 microns thick.

5. The method of claim 1 wherein a depth of the first groove is no more than 30% of a depth of the second groove.

6. The method of claim 1 wherein a width of the first groove is no more than 70% of a width of the second groove.

7. The method of claim 1 wherein scribing the second groove destroys the first groove.

8. The method of claim 1 further comprising moving the wafer to realign the wafer after said checking alignment of the wafer using a location of the first groove relative to a feature on the wafer.

9. The method of claim 1 wherein:

scribing a first groove comprises using a laser scribe at a first process power;

scribing a second groove comprises using the laser scribe at a second process power greater than the first process power.

10. A method of separating a wafer of light emitting devices, the method comprising:

scribing a first groove on a first dicing street on a surface of the wafer;

checking alignment of the wafer using a location of the first groove relative to a feature on the wafer;

after checking alignment, scribing a second groove wider than the first groove over the first groove on the first dicing street on the surface of the wafer;

scribing a third groove on a second dicing street disposed between the first dicing street and the third dicing street;

scribing a fourth groove on a third dicing street;

breaking the wafer at the fourth groove;

breaking the wafer at the second groove; and

after breaking the wafer at the fourth groove and breaking the wafer at the second groove, breaking the wafer at the third groove.

11. The method of claim 10 wherein a depth of the first groove is no more than 30% of a depth of the second groove.

12. The method of claim 10 wherein a width of the first groove is no more than 70% of a width of the second groove.

13. The method of claim 10 wherein scribing the second groove destroys the first groove.

14. The method of claim 10 further comprising moving the wafer to realign the wafer after said checking alignment of the wafer using a location of the first groove relative to a feature on the wafer.

15. The method of claim 10 wherein:

scribing a first groove comprises using a laser scribe at a first process power;

scribing a second groove comprise using the laser scribe at a second process power greater than the first process power.

16. A method of separating a wafer of light emitting devices, the method comprising:

scribing a first groove on a first dicing street;

scribing a second groove on a second dicing street;

scribing a third groove on a third dicing street, wherein the second dicing street is disposed between the first dicing street and the third dicing street;

breaking the wafer at the third groove;

breaking the wafer at the first groove; and

after breaking the wafer at the third groove and breaking the wafer at the first groove, breaking the wafer at the second groove.

17. The method of claim 16 wherein said breaking the wafer at the third groove and breaking the wafer at the first groove comprises separating from the wafer a section of the wafer comprising multiple rows of light emitting devices.