Method for producing epitaxial silicon carbide wafer
View Patent ↗The present invention provides a method for producing an epitaxial silicon carbide wafer comprising epitaxially growing SiC on an SiC substrate to produce an epitaxial SiC wafer during which further reducing stacking faults and comet defects than the conventional technologies to obtain an epitaxial SiC wafer having a high quality epitaxial film. The method for producing the epitaxial silicon carbide wafer is characterized in that a pre-growth atmosphere gas flowing into the growth furnace before the start of epitaxial growth contains hydrogen gas and has a balance of an inert gas and unavoidable impurities, and the hydrogen gas is contained in 0.1 to 10.0 vol % with respect to the inert gas.
1. A method for producing an epitaxial silicon carbide wafer comprising epitaxially growing silicon carbide on a silicon carbide monocrystalline substrate in a growth furnace by thermal CVD,
in which method for producing an epitaxial silicon carbide wafer, a pre-growth atmosphere gas flowing into the growth furnace before the start of epitaxial growth contains hydrogen gas and has a balance of an inert gas and unavoidable impurities, and said hydrogen gas is contained in 0.1 to 10.0 vol % with respect to the inert gas,
wherein said pre-growth atmosphere gas further contains at least one of a silane-based gas or hydrocarbon-based gas in a total of 0.1 to 1.0 vol % with respect to said inert gas.
2. A method for producing an epitaxial silicon carbide wafer comprising epitaxially growing silicon carbide on a silicon carbide monocrystalline substrate in a growth furnace by thermal CVD,
in which method for producing an epitaxial silicon carbide wafer, a pre-growth atmosphere gas flowing into the growth furnace before the start of epitaxial growth contains hydrogen gas and has a balance of an inert gas and unavoidable impurities, and said hydrogen gas is contained in 0.1 to 10.0 vol % with respect to the inert gas,
wherein said pre-growth atmosphere gas further contains at least one type of gas of a silicon chloride-based gas, chlorinated hydrocarbon gas, and carbon tetrachloride gas in a total of 0.1 to 1.0 vol % with respect to said inert gas.
3. The method for producing an epitaxial silicon carbide wafer according to claim 1 ,
wherein said inert gas is an argon gas or helium gas.
4. The method for producing an epitaxial silicon carbide wafer according to claim 1 ,
wherein said silane-based gas is comprised of a compound expressed by Si x H y (x, y are integers of 1 or more).
5. The method for producing an epitaxial silicon carbide wafer according to claim 1 ,
wherein said hydrocarbon-based gas is comprised of a compound expressed by C x H y (x, y are integers of 1 or more).
6. The method for producing an epitaxial silicon carbide wafer according to claim 2 ,
wherein said silicon chloride-based gas is comprised of a compound expressed by Si x H y Cl z (where, x, z are integers of 1 or more and y is an integer of 0 or more).
7. The method for producing an epitaxial silicon carbide wafer according to claim 2 ,
wherein said chlorinated hydrocarbon gas is comprised of a compound expressed by C x H y Cl z (where, x, y, z are integers of 1 or more).
8. The method for producing an epitaxial silicon carbide wafer according to claim 1 ,
wherein said pre-growth atmosphere gas further contains at least one type of gas of a silicon chloride-based gas, chlorinated hydrocarbon gas, and carbon tetrachloride gas in a total of 0.1 to 1.0 vol % with respect to said inert gas.
9. The method for producing an epitaxial silicon carbide wafer according to claim 1 ,
wherein said silicon carbide monocrystalline substrate has an off-angle of an angle slanted in a <11-20>direction with respect to a (0001) plane of 4° or less.
10. The method for producing an epitaxial silicon carbide wafer according to claim 2 ,
wherein said silicon carbide monocrystalline substrate has an off-angle of an angle slanted in a <11-20>direction with respect to a (0001) plane of 4° or less.
11. The method for producing an epitaxial silicon carbide wafer according to claim 3 ,
wherein said silicon carbide monocrystalline substrate has an off-angle of an angle slanted in a <11-20>direction with respect to a (0001) plane of 4° or less.
12. The method for producing an epitaxial silicon carbide wafer according to claim 4 ,
wherein said silicon carbide monocrystalline substrate has an off-angle of an angle slanted in a <11-20>direction with respect to a (0001) plane of 4° or less.
13. The method for producing an epitaxial silicon carbide wafer according to claim 5 ,
wherein said silicon carbide monocrystalline substrate has an off-angle of an angle slanted in a <11-20>direction with respect to a (0001) plane of 4° or less.
14. The method for producing an epitaxial silicon carbide wafer according to claim 6 ,
wherein said silicon carbide monocrystalline substrate has an off-angle of an angle slanted in a <11-20>direction with respect to a (0001) plane of 4° or less.
15. The method for producing an epitaxial silicon carbide wafer according to claim 7 ,
wherein said silicon carbide monocrystalline substrate has an off-angle of an angle slanted in a <11-20>direction with respect to a (0001) plane of 4° or less.
16. The method for producing an epitaxial silicon carbide wafer according to claim 1 comprising epitaxially growing silicon carbon by thermal CVD of an induction heating system using a graphite growth furnace.
17. The method for producing an epitaxial silicon carbide wafer according to claim 2 comprising epitaxially growing silicon carbon by thermal CVD of an induction heating system using a graphite growth furnace.
18. The method for producing an epitaxial silicon carbide wafer according to claim 2 ,
wherein said inert gas is an argon gas or helium gas.