Optoelectronic component, optoelectronic arrangement, method of producing an optical element, and method of producing an optoelectronic component
An optoelectronic component includes an optoelectronic semiconductor chip having a radiation-emitting face; and an optical element arranged over the radiation-emitting face, wherein the optical element includes a material in which light-scattering particles are embedded, and a concentration of the embedded light-scattering particles has a gradient forming an angle not equal to 90° with the radiation emission face.
1. A method of producing an optoelectronic component comprising:
producing an optical element by a method comprising:
providing a layer of a material with embedded light-scattering particles;
allowing the embedded light-scattering particles to sink in the material so that a concentration gradient is formed;
curing the material of the layer to form a block;
dividing the block to obtain an optical element with a lower side, the gradient forming an angle not equal to 90° with the lower side;
providing an optoelectronic semiconductor chip having a radiation emission face; and
arranging the optical element over the radiation emission face.
2. A method of producing an optical element comprising:
forming a block of material with embedded light-scattering particles, a concentration of the embedded light-scattering particles having a gradient;
dividing the block in order to obtain an optical element with a lower side, the gradient making an angle not equal to 90° with the lower side,
wherein the following steps are carried out in order to form the block:
providing a first layer of the material and a second layer of the material, the first layer having a first concentration of embedded light-scattering particles and the second layer having a second concentration of embedded light-scattering particles; and
flat bonding the first layer and the second layer to form the block.
3. The method as claimed in claim 2 , wherein the block is formed from more than two layers.
4. A method of producing an optoelectronic component comprising:
producing an optical element by the method as claimed in claim 2 ;
providing an optoelectronic semiconductor chip having a radiation emission face; and
arranging the optical element over the radiation emission face.
5. A method of producing an optical element comprising:
forming a block of a material with embedded light-scattering particles, a concentration of the embedded light-scattering particles having a gradient;
dividing the block in order to obtain an optical element with a lower side, the gradient making an angle not equal to 90° with the lower side,
wherein the following step is carried out in order to form the block:
coextruding a first layer of a material and a second layer of the material, the first layer having a first concentration of embedded light-scattering particles and the second layer having a second concentration of embedded light-scattering particles;
the first layer and the second layer being coextruded while lying on one another in order to form the block.
6. The method as claimed in claim 5 , wherein the block is formed from more than two layers.
7. A method of producing an optoelectronic component comprising:
producing an optical element by the method as claimed in claim 5 ;
providing an optoelectronic semiconductor chip having a radiation emission face; and
arranging the optical element over the radiation emission face.