Silicon nitride film and method of making thereof
A method of reducing carbon and/or hydrogen atom content ratio relative to contents of silicon atoms and nitrogen atoms in a silicon nitride film formed by a plasma CVD method using an organic silane as a material, and improving film quality such as electrical properties. A silicon nitride film is formed with the organic silane and at least one additive gas selected from a group consisting of hydrogen and ammonia by a plasma CVD method. The silicon nitride film has a carbon atom content ratio of less than 0.8 assuming that a sum of a silicon atom content and a nitrogen atom content in the silicon nitride film is 1. The silicon nitride film has improved properties such as reduced leakage current.
1. A silicon nitride film formed by a plasma CVD method using an organic silane as one of materials, wherein the materials do not include an inorganic silane, and the silicon nitride film has a carbon atom content ratio of less than 0.8 assuming that a sum of a silicon atom content and a nitrogen atom content in the silicon nitride film is 1.
2. The silicon nitride film according to claim 1 , wherein the silicon nitride film has a hydrogen atom content ratio of less than 0.9 assuming that a sum of the silicon atom content and the nitrogen atom content in the silicon nitride film is 1.
3. The silicon nitride film according to claim 1 , having a leakage current value of less than 1.0×10 −6 A/cm 2 at a field intensity of 1 MV/cm.
4. The silicon nitride film according to claim 1 , wherein the organic silane is tetrakis dimethylamino silane, tris dimethylamino silane, or bis diethylamino silane.
5. A device comprising the silicon nitride film according to claim 1 as an insulating film, a dielectric film, or a passivation film.
6. A production method for a silicon nitride film formed by a plasma CVD method using an organic silane as one of materials, the method comprising:
forming a plasma of the organic silane and at least one additive gas selected from the group consisting of a hydrogen gas and an ammonia gas by the plasma CVD method to form the silicon nitride film,
wherein the materials do not include an inorganic silane, and the silicon nitride film has a carbon atom content ratio of less than 0.8 assuming that a sum of a silicon atom content and a nitrogen atom content in the silicon nitride film is 1.
7. The production method for the silicon nitride film according to claim 6 , wherein the silicon nitride film has a hydrogen atom content ratio of less than 0.9 assuming that a sum of a silicon atom content and a nitrogen atom content in the silicon nitride film is 1.
8. The production method for the silicon nitride film according to claim 6 , wherein the organic silane is tetrakis dimethylamino silane, tris dimethylamino silane, or bis diethylamino silane.