Copper-titanium alloy for electronic component
View Patent ↗There is provided a copper-titanium alloy with large fluctuations in Ti concentration. The copper-titanium alloy for electronic components contains 2.0 to 4.0% by mass of Ti and, as a third element, 0 to 0.5% by mass in total of one or more selected from a group consisting of Fe, Co, Mg, Si, Ni, Cr, Zr, Mo, V, Nb, Mn, B, and P, with a balance being copper and unavoidable impurities, wherein when crystal grains having <100> orientation in a section parallel to a rolling direction are subjected to area analysis of Ti concentration in a matrix phase, a difference between a maximum Ti concentration and a minimum Ti concentration is 5 to 16% by mass.
1. A copper-titanium alloy for electronic components containing 2.0% to 4.0% by mass of Ti and, as a third element(s), 0% to 0.5% by mass in total of one or more selected from the group consisting of Fe, Co, Mg, Si, Ni, Cr, Zr, Mo, V, Nb, Mn, B, and P, with a balance being copper and unavoidable impurities, wherein when crystal grains having <100> orientation in a section parallel to a rolling direction are subjected to area analysis of Ti concentration in a matrix phase, a difference between a maximum Ti concentration and a minimum Ti concentration is 5% to 16% by mass.
2. A copper-titanium alloy for electronic components containing 2.0% to 4.0% by mass of Ti and, as a third element(s), 0% to 0.5% by mass in total of one or more selected from the group consisting of Fe, Co, Mg, Si, Ni, Cr, Zr, Mo, V, Nb, Mn, B, and P, with a balance being copper and unavoidable impurities, wherein when crystal grains having <100> orientation in a section parallel to a rolling direction are subjected to area analysis of Ti concentration in a matrix phase, a standard deviation of Ti concentration is 1.0% to 4.0% by mass.
3. The copper-titanium alloy according to claim 1 , wherein an average crystal grain size in a texture observation of a section parallel to a rolling direction is 2 μm to 30 μm.
4. The copper-titanium alloy according to claim 1 , wherein a 0.2% yield strength in a direction parallel to a rolling direction is 900 MPa or more; and when Bad-way W-bending test (bending axis is in the same direction as a rolling direction) is performed at a bending width of a sheet width (w)/sheet thickness (t)=3.0 and at a bending radius (R)/sheet thickness (t)=0, no crack occurs in a bent part.
5. A wrought copper product comprising the copper-titanium alloy according to claim 1 .
6. An electronic component comprising the copper-titanium alloy according to claim 1 .
7. The copper-titanium alloy according to claim 2 , wherein an average crystal grain size in a texture observation of a section parallel to a rolling direction is 2 μm to 30 μm.
8. The copper-titanium alloy according to claim 2 , wherein a 0.2% yield strength in a direction parallel to a rolling direction is 900 MPa or more; and when Bad-way W-bending test (bending axis is in the same direction as a rolling direction) is performed at a bending width of a sheet width (w)/sheet thickness (t)=3.0 and at a bending radius (R)/sheet thickness (t)=0, no crack occurs in a bent part.
9. A wrought copper product comprising the copper-titanium alloy according to claim 2 .
10. An electronic component comprising the copper-titanium alloy according to claim 2 .