Bi-axial tensile strained GE channel for CMOS
View Patent ↗An apparatus including a complimentary metal oxide semiconductor (CMOS) inverter including an n-channel metal oxide semiconductor field effect transistor (MOSFET); and a p-channel MOSFET, wherein a material of a channel in the n-channel MOSFET and a material of a channel in the p-channel MOSFET is subject to a bi-axial tensile strain. A method including forming an n-channel metal oxide semiconductor field effect transistor (MOSFET); forming a p-channel MOSFET; and connecting the gate electrodes and the drain regions of the n-channel MOSFET and the p-channel MOSFET, wherein a material of the channel in the n-channel MOSFET and a material of the channel in the p-channel MOSFET is subject to a bi-axial tensile strain.
1. An apparatus comprising:
a complimentary metal oxide semiconductor (CMOS) inverter comprising an n-channel metal oxide semiconductor field effect transistor (MOSFET) and a p-channel MOSFET,
wherein a material of a channel in the n-channel MOSFET and a material of a channel in the p-channel MOSFET is each subject to a bi-axial tensile strain, and
wherein the channel of each of the n-channel MOSFET and the p-channel MOSFET are disposed on a buffer layer and the buffer layer comprises a material having a larger lattice constant than a lattice constant of a material of the channel in the n-channel MOSFET and a material of the channel in the p-channel MOSFET.
2. The apparatus of claim 1 , wherein the material of the channel in the n-channel MOSFET and the material of the channel in the p-channel MOSFET are the same.
3. The apparatus of claim 1 , wherein the material of the channel in the n-channel MOSFET and the material of the channel in the p-channel MOSFET are each germanium.
4. The apparatus of claim 1 , wherein a material for the buffer layer comprises a Group III-V compound semiconductor material.
5. The apparatus of claim 1 , wherein the n-channel MOSFET and the p-channel MOSFET are planar transistors.
6. The apparatus of claim 1 , wherein the material of the channel in the n-channel MOSFET and the material of the channel in the p-channel MOSFET each has a lattice constant that is less than a lattice constant of a material for a respective gate electrode.
7. The apparatus of claim 6 , wherein the respective gate electrode has a length greater than 100 nanometers.
8. An apparatus comprising:
an n-channel metal oxide semiconductor field effect transistor (MOSFET) comprising a gate electrode, a source region, a drain region and a channel; and
a p-channel MOSFET comprising a gate electrode, a source region, a drain region and a channel,
wherein the gate electrode of the n-channel MOSFET is coupled to the gate electrode of the p-channel MOSFET and the drain of the n-channel MOSFET is coupled to the drain of the p-channel MOSFET,
wherein a material of the channel in the n-channel MOSFET and a material of the channel in the p-channel MOSFET is common and subject to a bi-axial tensile strain, and
wherein the channel of each of the n-channel MOSFET and the p-channel MOSFET is disposed on a buffer layer and the buffer layer comprises a material having a larger lattice constant than a lattice constant of the material of the channel in the n-channel MOSFET and a material of the channel in the p-channel MOSFET.
9. The apparatus of claim 8 , wherein a material for the buffer layer comprises a Group III-V compound semiconductor material.
10. The apparatus of claim 8 , wherein the n-channel MOSFET and the p-channel MOSFET are planar transistors.
11. The apparatus of claim 8 , wherein the common material of the channel in the n-channel MOSFET and a material of the channel in the p-channel MOSFET has a lattice constant that is less than a lattice constant of a material for the respective gate electrode.
12. The apparatus of claim 11 , wherein the gate electrode has a length greater than 100 nanometers.
13. The apparatus of claim 11 , wherein each of the channel of the n-channel MOSFET and the channel of the p-channel MOSFET comprises a nanoribbon.
14. An apparatus comprising:
an n-channel metal oxide semiconductor field effect transistor (MOSFET) comprising a gate electrode, a source region, a drain region and a channel; and
a p-channel MOSFET comprising a gate electrode, a source region, a drain region and a channel,
wherein the gate electrode of the n-channel MOSFET is coupled to the gate electrode of the p-channel MOSFET and the drain of the n-channel MOSFET is coupled to the drain of the p-channel MOSFET,
wherein a material of the channel in the n-channel MOSFET and a material of the channel in the p-channel MOSFET is subject to a bi-axial tensile strain, and
wherein the material of the channel in the n-channel MOSFET and the material of the channel in the p-channel MOSFET that is common is germanium.