Method for producing a composite body having at least one functional layer, or for further production of electronic or opto-electronic components

1. A method for producing a composite body having a layer structure and comprising: at least one substrate, which is in the form of a plate and has at least one planar substrate surface, and at least one substantially polycrystalline or at least one substantially single-crystal layer, which comprises at least one compound semiconductor, a ceramic material, or a metallic hard material, wherein the method comprises the steps to be performed in the following order of:

heating at least part of the planar substrate surface to a temperature of at least 100° C. and at most 550° C.;

cleaning the substrate surface by supplying hydrogen from a first material source and a plasma produced specifically therefor;

terminating the substrate surface by applying carbon, nitrogen, or oxygen from the first material source or a second material source and a plasma produced specifically therefor; and

growing the at least one layer by supplying material components of the compound semiconductor, of the ceramic material, or of the metallic hard material from the first material source and the second material source to the at least one planar substrate surface;

wherein an operating temperature during the cleaning step, the terminating step, and the growing step is lower than an operating temperature in the heating step;

wherein an operating pressure in an operational state of a vacuum-compatible reactor, in which the steps are performed, is in a range of 0.1 Pa to 10 Pa.

2. The method of claim 1 , wherein the components of the compound semiconductor, of the ceramic material, or of the metallic hard material are supplied by means of sputtering, plasma-enhanced chemical vapour deposition PECVD, or by means of at least one ion cannon.

3. The method of claim 1 , wherein the components of the compound semiconductor, of the ceramic material, or of the metallic hard material are supplied by means of a strip source.

4. The method of claim 1 , wherein the components of the compound semiconductor, of the ceramic material, or of the metallic hard material are supplied by means of at least two different strip sources, of which at least one of said strip sources comprises an ion cannon.

5. The method of claim 1 , wherein the substrate is moved in relation to at least one of the material sources at least as the steps of termination and of growth are being carried out.

6. The method of claim 1 , wherein the steps of the method are performed in at least two different vacuum-compatible reactors, the reactors being connected to one another by vacuum locks.

7. A method for producing an electronic or optoelectronic component by applying a plurality of semiconductor-comprising layers to a composite body, wherein the method comprises the steps of claim 1 .

8. The method of claim 7 , wherein the plurality of semiconductor-comprising layers comprise interlayers configured to reduce mechanical stresses within the composite body.

9. A method for producing an electronic or optoelectronic component, the method comprising the step of applying a plurality of semiconductor-comprising layers to a composite body, wherein the composite body is manufactured according to the method of claim 1 .

10. The method of claim 9 , wherein the plurality of layers comprise interlayers, which serve for reducing mechanical stresses within the composite body.

11. The method of claim 9 , wherein the plurality of semiconductor-comprising layers are applied by a process which is selected from a group consisting of metal-organic chemical vapour deposition (“MOCVD”), molecular beam epitaxy (“MBE”), and hydride vapour phase epitaxy (“HVPE”).

12. A composite body having at least one functional layer or for the further use for producing an electronic or optoelectronic component, the composite body being in the form of a layer structure, the composite body comprising:

at least one substrate, which is in the form of a plate and has at least one planar substrate surface; and

at least one substantially polycrystalline or at least one substantially single-crystal layer, which comprises at least one compound semiconductor, a ceramic material or a metallic hard material;

wherein the composite body comprises a termination layer, which is built up by a transformation of the substrate in an uppermost up to five monolayers of the substrate surface.

13. An electronic or optoelectronic component comprising at least one composite body according to claim 12 .

14. A method for producing a composite body having a layer structure and comprising:

at least one substrate, which is in the form of a plate and has at least one planar substrate surface, and

at least one substantially polycrystalline or at least one substantially single-crystal layer, which comprises at least one compound semiconductor, a ceramic material or a metallic hard material,

wherein the method comprises the steps of:

heating at least part of the planar substrate surface to a temperature of at least 100° C. and at most 550° C.;

cleaning the substrate surface by supplying hydrogen from a first material source and a plasma produced specifically therefor;

terminating the substrate surface by applying carbon, nitrogen, or oxygen from the first material source or a second material source and a plasma produced specifically therefor; and

growing the at least one layer by supplying material components of the compound semiconductor, of the ceramic material, or of the metallic hard material from the first material source and the second material source to the at least one planar substrate surface;

wherein the components of the compound semiconductor, of the ceramic material, or of the metallic hard material are supplied by means of at least two different strip sources, of which at least one of said strip sources comprises an ion cannon.