Methods of manufacturing large-area sputtering targets using interlocking joints
View Patent ↗In various embodiments, joined sputtering targets are formed at least in part by spray deposition of the sputtering material and/or welding.
1. A joined sputtering target comprising:
first and second discrete sputtering-target tiles (A) each comprising a sputtering material, and (B) disposed in direct mechanical contact with each other in a contact region at an interface therebetween, wherein (i) the interface comprises a recess disposed over the contact region, and (ii) the first tile comprises a beveled edge defining at least a portion of the recess;
a region of metal powder (i) disposed over and in contact with the interface in the contact region, (ii) at least partially filling the recess, and (iii) disposed in contact with the first and second tiles; and
a backing plate attached to surfaces of the first and second tiles opposite the region of metal powder.
2. The joined sputtering target of claim 1 , wherein the sputtering material comprises a mixture or alloy of at least two constituent materials.
3. The joined sputtering target of claim 2 , wherein the at least two constituent materials comprise Mo and Ti.
4. The joined sputtering target of claim 2 , wherein the metal powder comprises at least one of the constituent materials.
5. The joined sputtering target of claim 1 , wherein the metal powder comprises the sputtering material.
6. The joined sputtering target of claim 1 , wherein the metal powder consists essentially of the sputtering material.
7. The joined sputtering target of claim 1 , wherein the first and second tiles each consists essentially of the sputtering material.
8. The joined sputtering target of claim 7 , wherein the metal powder consists essentially of the sputtering material.
9. The joined sputtering target of claim 1 , wherein the sputtering material comprises at least one of molybdenum, titanium, copper, tungsten, niobium, or tantalum.
10. The joined sputtering target of claim 1 , wherein the second tile comprises a beveled edge defining a portion of the recess.
11. The joined sputtering target of claim 1 , wherein the beveled edge of the first tile is reentrant.
12. The joined sputtering target of claim 1 , wherein at least a portion of the beveled edge is substantially planar and forms an angle of 45° or greater with respect to a normal to a top surface of the joined sputtering target.
13. The joined sputtering target of claim 12 , wherein the angle is selected from the range of 45° to 60°.
14. The joined sputtering target of claim 1 , wherein the metal powder is substantially unmelted.
15. The joined sputtering target of claim 1 , wherein at least a portion of the region of metal powder comprises a plurality of powder particles flattened in a direction substantially perpendicular to a top surface of the joined sputtering target.
16. A method of forming a joined sputtering target comprising a sputtering material, the method comprising:
disposing first and second discrete sputtering-target tiles in direct mechanical contact at an interface therebetween, thereby forming a contact region, wherein (i) the interface comprises a recess disposed over the contact region, and (ii) the first tile comprises a beveled edge defining at least a portion of the recess;
after forming the contact region, spray-depositing a spray material over at least a portion of the contact region to substantially fill at least a portion of the recess and without spray-depositing spray material within the contact region, thereby forming the joined sputtering target; and
after forming the joined sputtering target, attaching the joined sputtering target to a backing plate.
17. The method of claim 16 , wherein the second tile comprises a beveled edge defining a portion of the recess.
18. The method of claim 16 , wherein the beveled edge of the first tile is reentrant.
19. The method of claim 16 , further comprising, before forming the contact region, spray-depositing a coating over one or more surfaces of at least one of the first or second tiles.
20. The method of claim 16 , further comprising annealing the joined sputtering target before attaching the joined sputtering target to the backing plate.
21. The method of claim 16 , wherein the backing plate is attached to a surface of the joined sputtering target opposite the recess.
22. The joined sputtering target of claim 2 , wherein the at least two constituent materials comprise Cu and W.
23. The joined sputtering target of claim 1 , wherein the backing plate is attached to the first and second tiles via a joining compound.
24. The joined sputtering target of claim 23 , wherein the joining compound comprises In solder.
25. The joined sputtering target of claim 1 , wherein the joined sputtering target is substantially free of residual stress.
26. The joined sputtering target of claim 1 , wherein an areal dimension of the joined sputtering target is at least 2800 mm×2500 mm.
27. The joined sputtering target of claim 1 , wherein a length of the joined sputtering target is 2.7 meters or longer.