Simultaneously fabricating a high voltage transistor and a finFET
Forming a semiconductor layer on a semiconductor substrate, a top surface of the semiconductor layer above a fin in a second region is higher than a top surface of the semiconductor layer in a first region, etching the semiconductor layer and a mask in the first region to expose a top surface of the semiconductor substrate to form a first stack, and etching the semiconductor layer and the mask in the second region to expose a top surface of the fin to form a second stack, epitaxially growing a semiconductor material on a top surface of the fin not covered by the second stack, recessing the first and second stack to expose a top surface of the semiconductor layer, a portion of the mask remains above the semiconductor layer in the first stack, top surfaces of each of the first and second stacks each are substantially flush with one another.
1. A method comprising:
conformally depositing a semiconductor layer on a semiconductor substrate simultaneously in a first region and a second region, wherein a top surface of the semiconductor layer above an array of fins only in the second region is at a greater height than a top surface of the semiconductor layer in the first region, wherein the height is measured relative to a common planar surface of the semiconductor substrate;
forming a mask on the semiconductor layer;
simultaneously etching the semiconductor layer and the mask in the first region to expose a top surface of the semiconductor substrate to form a first stack, and the semiconductor layer and the mask in the second region to expose a top surface of a fin of the array of fins to form a second stack;
simultaneously forming a first pair of sidewall spacers on opposite sidewalls of the first stack and a second pair of sidewall spacers on opposite sidewalls of the second stack by conformally depositing a dielectric layer and anisotropically etching the dielectric layer from horizontal surfaces of the first stack and the second stack, wherein the first pair of sidewall spacers remains adjacent to the sidewalls of the first stack and the second pair of sidewall spacers remains adjacent to the sidewalls of the second stack;
epitaxially growing a semiconductor material on a top surface of the fin not covered by the second stack nor the second sidewall spacers;
recessing, simultaneously, the first stack and second stack to remove the mask and expose a top surface of the semiconductor layer in the second stack, wherein a portion of the mask remains above the semiconductor layer in the first stack, wherein after recessing, a top surface of the remaining portion of the mask in the first stack is substantially flush with the top surface of the semiconductor layer in the second stack; and
simultaneously forming a gate in the first region and source drain contacts in the second region, wherein the gate is adjacent to and in direct contact with at least one of the first pair of sidewall spacers, and wherein the source drain contacts are in direct contact with the epitaxially grown semiconductor material.