Semiconductor storage device
A semiconductor storage device includes a cell array including resistance change elements formed above a semiconductor substrate; first cell transistors formed on the semiconductor substrate and provided in association with the resistance change elements; first gate electrodes included in the first cell transistor and extending in a first direction; a first bit lines electrically connected to the resistance change elements respectively and extending in a second direction perpendicular to the first direction; a second bit lines electrically connected to one end of a current path of the first cell transistors respectively and extending in the second direction; and first active areas in which the first cell transistors are formed, and which extend in a direction crossing the first direction at a first angle.
1. A semiconductor storage device comprising:
a first area including a plurality of memory cells;
a second area that is adjacent to the first area in a first direction and does not include a plurality of memory cells;
a plurality of first bit lines electrically connected to first ends of the memory cells and extending in the first direction in the first and second areas;
a plurality of first source lines electrically connected to second ends of the memory cells and extending in the first direction in the first and second areas;
a plurality of second bit lines extending in the first direction in the second area, wherein the second bit lines are extensions of the first bit lines;
a plurality of second source lines extending in the first direction in the second area, wherein the second source lines are extension of the first source lines;
a plurality of first switch transistors which connect the first bit lines and the second bit lines; and
a plurality of second switch transistors which connect the first source lines and the second source lines,
wherein with respect to each of the memory cells:
the memory cell includes a resistance change element and a first cell transistor,
the first cell transistor includes a first gate electrode extending in a second direction,
a first end of the resistance change element is electrically connected to a first end of the first cell transistor,
one of the first bit lines is electrically connected to a second end of the resistance change element, and
one of the first source lines is electrically connected to a second end of the first cell transistor,
wherein the first and second switch transistors comprise a plurality of second cell transistors each including:
a first end electrically connected to one of the first bit lines or one of the first source lines,
a second end electrically connected to one of the second bit lines or one of the second source lines, and
a second gate electrode extending in the second direction,
wherein the first area includes a plurality of first active areas in which a plurality of first cell transistors, each of which is the first cell transistor of one of the memory cells, are formed and which extend in a direction crossing the first direction at a first angle, and
wherein the second area includes a plurality of second active areas in which the second cell transistors are formed and which extend in a direction crossing the first direction at a second angle.
2. The semiconductor storage device of claim 1 , further comprising a discharge circuit including:
a plurality of third cell transistors each including a first end electrically connected to one of the first bit lines or one of the first source lines, a second end electrically connected to a ground potential, and a third gate electrode extending in the second direction; and
a plurality of third active areas in which the third cell transistors are formed and which extend in a direction crossing the first direction at a third angle.
3. The semiconductor storage device of claim 2 , wherein the first cell transistors, the second cell transistors, and the third cell transistors are substantially the same size.
4. The semiconductor storage device of claim 2 , wherein the first angle, the second angle, and the third angle are equal.
5. The semiconductor storage device of claim 1 , wherein a predetermined number of the second cell transistors include the first ends which are electrically connected in parallel, and include the second gate electrodes to which the same signal is input.
6. The semiconductor storage device of claim 1 , wherein the second area includes a first controller configured to control a plurality of the first bit lines, and a second controller configured to control a plurality of the first source lines.
7. The semiconductor storage device of claim 1 , wherein each of the first active areas is provided under two resistance change elements sandwiching two of the first gates which neighbor each other in the first direction, and
wherein the second active areas have the same shape as the first active areas.
8. The semiconductor storage device of claim 7 , further comprising a discharge circuit including:
a plurality of third cell transistors each including a first end electrically connected to one of the first bit lines or one of the second bit lines, a second end electrically connected to a ground potential, and a third gate electrode extending in the first direction; and
a plurality of third active areas in which the third cell transistors are formed and which have the same shape as the first active areas.
9. The semiconductor storage device of claim 8 , wherein the first cell transistors, the second cell transistors, and the third cell transistors have substantially the same size.
10. The semiconductor storage device of claim 7 , wherein a predetermined number of the second cell transistors include the first ends which are electrically connected in parallel, and include the second gate electrodes to which the same signal is input.
11. The semiconductor storage device of claim 7 , wherein the second area includes a first controller configured to control a plurality of the first bit lines, and a second controller configured to control a plurality of the second bit lines.
12. A semiconductor storage device comprising:
a first area including a plurality of memory cells;
a second area that is adjacent to the first area in a first direction and does not include a plurality of memory cells;
a plurality of first bit lines electrically connected to first ends of the memory cells and extending in the first direction at the first and second areas;
a plurality of first source lines electrically connected to second ends of the memory cells and extending in the first direction at the first and second areas;
a plurality of second bit lines extending in the first direction at the second area, wherein the second bit lines are extensions of the first bit lines;
a plurality of second source lines extending in the first direction at the second area, wherein the second source lines are extensions of the first source lines;
a plurality of first switch transistors which connect the first bit lines and the second bit lines; and
a plurality of second switch transistors which connect the first source lines and the second source lines,
wherein the first area includes a plurality of first active areas in which a plurality of first cell transistors are formed and which extend in a direction crossing the first direction at a first angle, and
wherein the second area includes a plurality of second active areas in which a plurality of second cell transistors are formed and which extend in a direction crossing the first direction at a second angle.
13. The semiconductor storage device of claim 12 , further comprising a discharge circuit including:
a plurality of third cell transistors each including a first end electrically connected to one the first bit lines or one of the first source lines, a second end electrically connected to a ground potential, and a gate electrode extending in a second direction, and
a plurality of third active areas in which the third cell transistors are formed and which extend in a direction crossing the first direction at a third angle.
14. The semiconductor storage device of claim 13 , wherein the first cell transistors, the second cell transistors, and the third transistors are substantially the same size.
15. The semiconductor storage device of claim 13 , wherein the first angle, the second angle, and the third angle are equal.
16. The semiconductor storage device of claim 12 , wherein a predetermined number of the second cell transistors include first ends which are electrically connected in parallel, and include gate electrodes to which the same signal is input.
17. The semiconductor storage device of claim 12 , wherein the second area includes a first controller configured to control a plurality of the first bit lines, and a second controller configured to control a plurality of the first source lines.
18. The semiconductor storage device of claim 12 , further comprising a discharge circuit including:
a plurality of third cell transistors each including a first end electrically connected to the first bit lines or the second bit lines, a second end electrically connected to a ground potential, and a gate electrode extending in the first direction, and
a plurality of third active areas in which the third cell transistors are formed and which have the same shape as the first active areas.
19. The semiconductor storage device of claim 18 , wherein the first cell transistors, the second cell transistors, and the third cell transistors have substantially the same size.
20. The semiconductor storage device of claim 12 , wherein a predetermined number of the second cell transistors include first ends which are electrically connected in parallel, and include gate electrodes to which the same signal is input.