Substrate processing apparatus and heating unit
The present invention is directed providing a technique capable of reducing a time for stabilizing a temperature in a processing chamber. The technique includes: a substrate support configured to support a substrate; a thermal insulation unit disposed below the substrate support; a processing chamber configured to accommodate the substrate support and where the substrate is processed; a first heating unit disposed around the processing chamber and configured to heat an inside of the processing chamber from a lateral side thereof; and a second heating unit disposed between the substrate support and the thermal insulation unit inside the processing chamber, the second heating unit including a heater having a substantially annular shape and a suspending member extending downward from the heater, wherein a diameter of the heater is smaller than that of the substrate.
1. A substrate processing apparatus comprising:
a substrate support that supports a substrate;
a thermal insulation unit disposed below the substrate support;
a processing chamber that accommodates the substrate support and where the substrate is processed;
a first heating unit disposed around the processing chamber that heats an inside of the processing chamber from a lateral side thereof; and
a second heating unit disposed under the substrate support inside the processing chamber, the second heating unit comprising:
a tubular heater portion having a circular arc shape with a hollow center, the tubular heater portion having a diameter smaller than a diameter of the substrate;
a tubular suspending portion connected to the tubular heater portion and extending downward from the tubular heater portion;
a V-shaped tubular portion interposed between the tubular heater portion and the tubular suspending portion to connect two ends of the tubular heater portion to one end of the tubular suspending portion; and
a heating element encapsulated in the tubular heater portion.
2. The substrate processing apparatus of claim 1 , wherein the diameter of the tubular heater portion ranges from one-fifth to three-fifths of the diameter of the substrate.
3. The substrate processing apparatus of claim 1 , further comprising a temperature measuring member being in contact with a surface of the tubular heater portion.
4. The substrate processing apparatus of claim 3 , wherein the second heating unit further comprises a temperature measuring member support installed at the tubular heater portion, and the temperature measuring member support fixes the temperature measuring member to the surface of the tubular heater portion.
5. The substrate processing apparatus of claim 4 , further comprising a spacer installed on an upper surface of the thermal insulation unit below the tubular heater portion with a gap between the spacer and the tubular heater portion.
6. The substrate processing apparatus of claim 1 , wherein the first heating unit comprises: an upper heater that heats an upper region of the processing chamber where the substrate support is accommodated; and a lower heater that heats a lower region of the processing chamber where the thermal insulation unit is accommodated, and the tubular heater portion is installed equal to or higher than a boundary between the upper heater and the lower heater.
7. The substrate processing apparatus of claim 6 , wherein a temperature of the tubular heater portion is equal to or lower than a temperature of the lower heater.
8. The substrate processing apparatus of claim 1 , wherein the thermal insulation unit comprises a notched portion where the tubular suspending portion inserted therein passes through, the notched portion extending over an entire length of the thermal insulation unit in a vertical direction.
9. The substrate processing apparatus of claim 1 , wherein the second heating unit is disposed between the substrate support and the thermal insulation unit.
10. The substrate processing apparatus of claim 1 , wherein the heating element comprises a coiled resistive heating element.