Fingerprint sensor device and method
A fingerprint sensor package and method are provided. Embodiments include a sensor and a sensor surface material encapsulated within the fingerprint sensor package. An array of electrodes of the sensor are electrically connected using through vias that are located either in the sensor, in connection blocks separated from the sensor, or through connection blocks, or else connected through other connections such as wire bonds. A high voltage die is attached in order to increase the sensitivity of the fingerprint sensor.
1. A method of manufacturing a fingerprint scanner, the method comprising:
adhering a sensor to a sensor surface material, wherein the sensor comprises through substrate vias;
encapsulating the sensor and the sensor surface material with an encapsulant;
forming a redistribution layer on a surface of the sensor and in electrical connection with the through substrate vias, the surface facing away from the sensor surface material; and
attaching a high voltage die in electrical connection with the redistribution layer.
2. The method of claim 1 , wherein the attaching the high voltage die attaches the high voltage die on an opposite side of the redistribution layer than the sensor.
3. The method of claim 1 , further comprising singulating the encapsulant in order to form a first sensor package.
4. The method of claim 3 , wherein the first sensor package has a first width, the sensor surface material has a second width less than the first width, and the sensor has a third width less than the second width.
5. The method of claim 1 , wherein the forming the redistribution layer further comprises forming a conductive region in physical contact with the through substrate vias.
6. The method of claim 1 , further comprising forming contact pads in electrical connection with the through substrate vias, wherein the forming the redistribution layer further comprises forming a conductive region in physical contact with the contact pads.
7. A method of manufacturing a fingerprint scanner, the method comprising:
electrically connecting a contact pad to a conductive region of a first redistribution layer, wherein the contact pad is located on a first surface of a sensor, wherein the conductive region of the first redistribution layer is laterally separated from the sensor;
attaching a sensor surface material over the contact pad; and
connecting a high-voltage chip to the first redistribution layer.
8. The method of claim 7 , further comprising:
forming a through via on the first redistribution layer; and
after the forming the through via, adhering the sensor to the first redistribution layer.
9. The method of claim 8 , wherein the electrically connecting the contact pad to the conductive region further comprises forming a second redistribution layer to electrically connect the through via to the contact pad.
10. The method of claim 7 , wherein the electrically connecting the contact pad to the conductive region further comprises forming a wire bond to electrically connect the through via to the contact pad.
11. The method of claim 10 , further comprising encapsulating the sensor and the wire bond.
12. The method of claim 7 , further comprising forming the first redistribution layer over a protective layer and underbump metallizations prior to electrically connecting the contact pad to the conductive region.
13. The method of claim 12 , further comprising patterning the protective layer to expose the underbump metallizations.
14. The method of claim 7 , further comprising:
placing a substrate onto the first redistribution layer, the substrate comprising conductive vias; and
thinning the substrate and the sensor to expose the conductive vias.
15. A semiconductor device comprising:
a sensor comprising a semiconductor substrate and conductive vias extending through the semiconductor substrate;
a sensor surface material attached to the sensor;
a redistribution layer electrically connected to the conductive vias and located on an opposite side of the sensor than the sensor surface material; and
a high voltage die electrically connected to the redistribution layer.
16. The semiconductor device of claim 15 , wherein the sensor has a first width and the sensor surface material has a second width greater than the first width.
17. The semiconductor device of claim 16 , wherein the sensor and the sensor surface material are part of a first package with a third width, the third width being larger than second width.
18. The semiconductor device of claim 16 , wherein the sensor and the sensor surface material are part of a first package with the second width.
19. The semiconductor device of claim 15 , wherein the redistribution layer is electrically connected to the conductive vias through contact pads.
20. The semiconductor device of claim 15 , wherein the redistribution layer is in physical contact with the conductive vias.