Ceramic material and capacitor comprising the ceramic material
A ceramic material for capacitors using multilayer technology of formula (I): Pb (1−1.5a) A a B b (Zr 1−x Ti x ) (1−c−d−e−f) C e Si c O 3 +y·PBO wherein A is selected from the group consisting of La, Nd, Y, Eu, Gd, Tb, Dy, Ho, Er and Yb; C is selected from the group consisting of Ni and Cu; and 0<a<0.12, 0.05≤x≤0.3, 0≤c<0.12, 0.001<e<0.12 and 0≤y<1.
1. A capacitor comprising:
at least one ceramic layer composed of a ceramic material for capacitors using multilayer technology of formula (I):
Pb (1−1.5a+e) A a (Zr 1−x Ti x ) (1−c−e) C e Si c O 3 +y·PbO (I)
wherein
A is selected from the group consisting of La, Nd, Y, Eu, Gd, Tb, Dy, Ho, Er and Yb;
C is selected from the group consisting of Ni and Cu; and
0<a<0.12
0.05≤x≤0.3
0≤c<0.12
0.001<e<0.12
0≤y<1, and
a conductive electrode formed on the at least one ceramic layer, wherein the current-carrying capacity at 100° C. is at least 1A/μF.
2. The capacitor according to claim 1 , wherein the conductive electrode is arranged between adjacent ceramic layers.
3. The capacitor according to claim 1 , wherein the conductive electrode comprises a base metal.
4. The capacitor according to claim 1 , wherein the current-carrying capacity is at least 1A/μF at −40° C. to 150° C.
5. The capacitor according to claim 4 , wherein the base metal is Ag or Cu.
6. The capacitor according to claim 1 , wherein the current-carrying capacity is at least 1A/μF at 80° C. to 150° C.
7. The capacitor according to claim 2 , wherein the current-carrying capacity is at least 1A/μF at −40° C. to 150° C.
8. The capacitor according to claim 2 , wherein the current-carrying capacity is at least 1A/μF at 80° C. to 150° C.
9. The capacitor according to claim 3 , wherein the current-carrying capacity is at least 1A/μF at −40° C. to 150° C.
10. The capacitor according to claim 3 , wherein the current-carrying capacity is at least 1A/μF at 80° C. to 150° C.