Magnetic memory with high thermal budget

1. A method of forming a storage unit of a memory cell comprising:

forming a bottom electrode;

forming a fixed layer disposed over the bottom electrode, wherein the fixed layer comprises a hard layer disposed over a base layer, the base layer promotes face-centered cubic (FCC) structure along (111) orientation to increase perpendicular magnetic anisotropy, the base layer comprises

a wetting layer, wherein the wetting layer comprises Mg, the wetting layer promotes FCC structure along (111) orientation,

a roughness smoother layer comprising a first surfactant layer with small atoms for filling gaps to clean a surface of the wetting layer and a second surfactant layer over the first surfactant layer, and

a seed layer comprising n bilayers which promote FCC structure along (111) orientation;

forming at least a first tunneling barrier layer over the hard layer;

forming a storage layer over the first tunneling barrier layer; and

forming a top electrode over the storage layer.

2. The method of claim 1 wherein the hard layer is formed over the seed layer.

3. The method of claim 2 wherein a bilayer of the seed layer comprises a first layer Y having a thickness t 1 and a second layer X having a thickness t 2 and the n bilayers of the seed layer is defined by (Yt 1 /Xt 2 ) n , and wherein a total thickness of the seed layer is equal to (t 1 +t 2 )*n.

4. The method of claim 3 wherein n is about 2-20 and the total thickness of the seed layer is about 5 nm or less.

5. The method of claim 3 wherein:

the first layer Y is disposed below the second layer X; and

the first layer Y is a magnetic layer and the second layer X is a non-magnetic layer having a body-centered cubic (BCC) structure along (110) orientation with high recrystallization temperature.

6. The method of claim 5 wherein:

the first layer Y comprises Ni, CoNi or NiFe; and

the second layer X comprises Mo, Cr, W, Nb or V.

7. The method of claim 3 wherein the hard layer comprises a synthetic antiferromagnetic (SAF) layer which includes first and second antiparallel (AP) layers separated by a coupling layer.

8. The method of claim 7 wherein an AP layer of the first and second AP layers include multiple bilayers and the AP layers are configured with a FCC structure along the (111) orientation facilitated by the base layer.

9. The method of claim 8 wherein the bilayer of the AP layer comprises Co/Ni, CoFe/Ni or CoFeB/Ni.

10. The method of claim 3 wherein the roughness smoother is formed between the wetting layer and the seed layer, wherein the roughness smoother improves surface smoothness of the wetting layer.

11. The method of claim 10 wherein the roughness smoother comprises a plasma treatment to improve surface smoothness of the wetting layer.

12. The method of claim 3 wherein the wetting layer comprises multiple layers which include Mg and layers having a BCC structure along (110) orientation or layers having a HCP structure along (0002) orientation which together promote the FCC structure along the (111) orientation.

13. The method of claim 2 comprising forming a second tunneling barrier layer over the storage layer, wherein the first and second tunneling barrier layers need not be the same and form a dual tunneling barrier storage unit.

14. A method of forming a storage unit of a memory cell comprising:

forming a bottom electrode;

forming a fixed layer disposed over the bottom electrode, wherein the fixed layer comprises a hard layer disposed over a base layer, the base layer promotes face-centered cubic (FCC) structure along (111) orientation to increase perpendicular magnetic anisotropy, the base layer comprises

a wetting layer, wherein the wetting layer comprises multiple layers which include Mg and layers having a BCC structure along (110) orientation or layers having a HCP structure along (0002) orientation which together promote the FCC structure along the (111) orientation,

a roughness smoother layer comprising a first surfactant layer with small atoms for filling gaps to clean a surface of the wetting layer and a second surfactant layer over the first surfactant layer, and

a seed layer comprising n bilayers which promote FCC structure along (111) orientation, wherein

a bilayer of the seed layer comprises a first layer Y having a thickness t 1 and a second layer X having a thickness t 2 and the n bilayers of the seed layer is defined by (Yt 1 /Xt 2 ) n , wherein

a total thickness of the seed layer is equal to (t 1 +t 2 )*n, and

the hard layer is formed over the seed layer;

forming at least a first tunneling barrier layer over the hard layer;

forming a storage layer over the first tunneling barrier layer; and

forming a top electrode over the storage layer.

15. A storage unit of a memory cell comprising:

a bottom electrode;

a fixed layer disposed over the bottom electrode, wherein the fixed layer comprises a hard layer disposed over a base layer, the base layer promotes face-centered cubic (FCC) structure along (111) orientation to increase perpendicular magnetic anisotropy, the base layer comprises

a wetting layer, wherein the wetting layer comprises multiple layers, the multiple layers include Mg and other layers which together promote FCC structure along (111) orientation,

a roughness smoother layer comprising a first surfactant layer with small atoms for filling gaps to clean a surface of the wetting layer and a second surfactant layer over the first surfactant layer, and

a seed layer comprising n bilayers which promote FCC structure along (111) orientation;

at least a first tunneling barrier layer disposed over the hard layer;

a storage layer disposed over the first tunneling barrier layer; and

a top electrode disposed over the storage layer.

16. The storage unit of claim 15 wherein a bilayer of the seed layer comprises a first layer Y having a thickness t 1 and a second layer X having a thickness t 2 and the n bilayers of the seed layer is defined by (Yt 1 /Xt 2 ) n , and wherein a total thickness of the seed layer is equal to (t 1 +t 2 )*n.

17. The storage unit of claim 16 wherein:

the first layer Y is disposed below the second layer X; and

the first layer Y is a magnetic layer and the second layer X is a non-magnetic layer having a body-centered cubic (BCC) structure along (110) orientation with high recrystallization temperature.

18. The storage unit of claim 16 wherein the other layers of the wetting layer include layers having a BCC structure along (110) orientation or layers having a HCP structure along (0002) orientation.

19. The storage unit of claim 16 wherein the base layer further comprises a roughness smoother disposed between the wetting layer and the seed layer, wherein the roughness smoother improves surface smoothness of the wetting layer.