Forming method of superposition checking mark, manufacturing method of a semiconductor device and semiconductor device

1. A forming method of superposition checking marks, comprising:

forming a first superposition checking mark to have a first step with respect to an arrangement surface for the first superposition checking mark;

forming an opaque film covering the first superposition checking mark and the first step to have a second step resulting from the first step on the arrangement surface; and

forming on the opaque film a second superposition checking mark provided with a transparent film allowing observation of the second step.

2. A forming method of superposition checking marks, comprising:

forming a first superposition checking mark to have a first step with respect to an arrangement surface for the first superposition checking mark;

forming an opaque film having a second step resulting from the first step on the arrangement surface; and

forming on the opaque film a second superposition checking mark provided with a transparent film allowing observation of the second step, wherein

the first superposition checking mark protrudes on the arrangement surface.

3. The forming method of superposition checking marks of claim 2 , comprising forming under the opaque film a cover film that is arranged on the arrangement surface to cover the first superposition checking mark and has a third step resulting from the first step.

4. The forming method of superposition checking marks of claim 3 , wherein in the forming of the first superposition checking mark, a range of a mark area or an amount of protrusion of a columnar body is set according to a thickness of the cover film.

5. The forming method of superposition checking marks of claim 3 , comprising forming under the cover film air gaps around the protruded portion of the first superposition checking mark.