Artificially engineered III-nitride digital alloy

1. A method of forming a III-Nitride quaternary digital alloy (“DA”) of AlGaInN, said method comprising:

generating a periodic structure of closely separated binary alloy layers that collectively form a single-crystal material structure by an epitaxial process selected from a group consisting of metalorganic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE), each of said binary alloy layers comprising one of AlN, GaN and InN, wherein each of said binary alloy layers has a respective thickness of 1-4 monolayers (“ML”s), wherein a first binary alloy layer of said binary alloy layers and a second binary alloy layer of said binary alloy layers provide a ground-state wave function overlap of at least 75%, and wherein said periodic structure of binary alloy layers has a total thickness of between 10-50 periods.

2. The method according to claim 1 , wherein a first period of said periodic structure comprises 3 binary alloy layers.

3. The method according to claim 1 , wherein said periodic structure of binary alloy layers forms a superlattice structure.

4. The method according to claim 3 , wherein said superlattice structure comprises a strong inter-well resonant coupling between said binary alloy layers.

5. The method according to claim 1 , wherein said periodic structure of closely separated binary alloy layers is generated using an epitaxial process.

6. The method according to claim 1 , wherein an energy gap of said AlGaInN DA may be tuned by varying said respective thickness of each of said binary alloy layers.

7. The method according to claim 1 , wherein said ground-state wave function overlap is at least 85%.

8. The method of claim 1 , wherein said respective thickness is 1-2 MLs.

9. The method of claim 1 , wherein said periodic structure has an energy gap of at least 0.60 eV.

10. The method of claim 1 , wherein said periodic structure has an energy gap of at least 3.90 eV.

11. A III-Nitride quaternary digital alloy (“DA”) of AlGaInN comprising:

a single-crystal periodic structure of closely separated binary alloy layers, each of said binary alloy layers comprising one of AlN, GaN and InN, wherein each of said binary alloy layers has a respective thickness of 1-4 MLs, wherein a first binary alloy layer of said binary alloy layers and a second binary alloy layer of said binary alloy layers provide a ground-state wave function overlap of at least 75% and, wherein said periodic structure of binary alloy layers has a total thickness of between 10-50 periods.

12. The III-Nitride quaternary DA according to claim 11 , wherein a first period of said periodic structure comprises 3 binary alloy layers.

13. The III-Nitride quaternary DA according to claim 11 , wherein said periodic structure of binary alloy layers forms a superlattice structure.

14. The III-Nitride quaternary DA according to claim 13 , wherein said superlattice structure comprises strong inter-well resonant coupling between binary alloy layers.

15. The III-Nitride quaternary DA according to claim 11 , wherein said periodic structure of closely separated binary alloy layers is generated using an epitaxial process.

16. The III-Nitride quaternary DA according to claim 11 , wherein an energy gap of said AlGaInN DA may be tuned by varying said respective thickness of each of said binary alloy layers.

17. The III-Nitride quaternary DA of claim 11 , wherein said respective thickness is 1-2 MLs.

18. The III-Nitride quaternary DA of claim 11 , wherein said ground-state wave function overlap is at least 85%.

19. The III-Nitride quaternary DA of claim 11 , wherein said periodic structure has an energy gap of at least 0.60 eV.

20. The III-Nitride quaternary DA of claim 11 , wherein said periodic structure has an energy gap of at least 3.90 eV.

21. A method of forming a III-Nitride quaternary digital alloy (“DA”) of AlGaInN, said method comprising:

generating, using a single-crystal epitaxial process selected from a group consisting of metalorganic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE), a periodic structure of closely separated binary alloy layers, each of said binary alloy layers comprising one of AlN, GaN and InN, wherein each of said binary alloy layers has a respective thickness of 1-4 monolayers (“ML”s), wherein a first binary alloy layer of said binary alloy layers and a second binary alloy layer of said binary alloy layers provide a ground-state wave function overlap of at least 75%, and wherein said periodic structure of binary alloy layers has a total thickness of between 10-50 periods.