Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating same
Semiconductor structures and devices including strained material layers having impurity-free zones, and methods for fabricating same. Certain regions of the strained material layers are kept free of impurities that can interdiffuse from adjacent portions of the semiconductor. When impurities are present in certain regions of the strained material layers, there is degradation in device performance. By employing semiconductor structures and devices (e.g., field effect transistors or “FETs”) that have the features described, or are fabricated in accordance with the steps described, device operation is enhanced.
1. A semiconductor device comprising:
a source region and a drain region in a substrate;
a strained semiconductor layer on a surface of the substrate between the source region and the drain region;
a gate dielectric over the strained semiconductor layer;
a gate electrode over the gate dielectric; and
gate spacers on opposing sidewalls of the gate dielectric and gate electrode, wherein the opposing sidewalls of the gate dielectric extend in a direction perpendicular to a major surface of the substrate,
wherein the strained semiconductor layer comprises a first concentration of an impurity in a first portion adjacent an interface with the substrate, a second concentration of the impurity in a second portion distal from the interface, and a third concentration in a third portion disposed between the first portion and the second portion, the first concentration being greater than the second concentration, the third concentration being greater than the second concentration.
2. The semiconductor device of claim 1 , wherein the strained semiconductor layer is compressively strained.
3. The semiconductor device of claim 1 , wherein the strained semiconductor layer is tensilely strained.
4. The semiconductor device of claim 1 , wherein the strained semiconductor layer adjoins the substrate at an interface.
5. The semiconductor device of claim 1 , wherein the second concentration is substantially equal to zero.
6. The semiconductor device of claim 1 , wherein the second portion of the strained semiconductor layer distal from the interface has a thickness of at least fifty Angstroms, the second concentration of the impurity being substantially uniform through the second portion.
7. The semiconductor device of claim 1 , wherein the impurity is an n-type dopant or a p-type dopant.
8. The semiconductor device of claim 1 , wherein the impurity is silicon or germanium.
9. The semiconductor device of claim 1 , wherein the strained semiconductor layer directly overlies at least a portion of a top surface of the source region and at least a portion of a top surface of the source region.
10. The semiconductor device of claim 1 , wherein bottom surfaces of the gate spacers adjoin a top surface of the strained semiconductor layer.
11. A semiconductor device comprising:
a source region and a drain region in a substrate;
a semiconductor layer on a surface of the substrate between the source region and the drain region, the semiconductor layer adjoining the substrate at an interface, the semiconductor layer having a first concentration of an impurity in a first portion adjacent the interface with the substrate, a second concentration of the impurity in a second portion distal from the interface, and a third concentration in a third portion disposed between the first portion and the second portion, the third concentration being greater than the first and second concentrations;
a gate dielectric over the semiconductor layer;
a gate electrode over the gate dielectric; and
gate spacers on opposing sidewalls of the gate dielectric and gate electrode, wherein bottom surfaces of the gate spacers adjoin a top surface of the semiconductor layer.
12. The semiconductor device of claim 11 , wherein the second portion distal from the interface of the semiconductor layer is at least fifty Angstroms thick.
13. The semiconductor device of claim 11 , wherein the semiconductor layer is strained.
14. The semiconductor device of claim 13 , wherein the semiconductor layer is compressively strained.
15. The semiconductor device of claim 13 , wherein the semiconductor layer is tensilely strained.
16. A device comprising:
a strained semiconductor layer on a surface of a substrate, the strained semiconductor layer adjoining the substrate at an interface, the strained semiconductor layer having a first concentration of an impurity in a first portion adjacent the interface with the substrate, a second concentration of the impurity in a second portion distal from the interface, and a third concentration in a third portion disposed between the first portion and the second portion, the first concentration being greater than the second concentration, the third concentration being greater than the second concentration;
a strain-inducing material proximate the strained semiconductor layer;
a gate dielectric over the strained semiconductor layer;
a gate electrode over the gate dielectric; and
gate spacers on opposing sidewalls of the gate dielectric and gate electrode, wherein the gate spacers extend continuously from a top surface of the gate dielectric to a bottom surface of the gate dielectric.
17. The device of claim 16 , wherein the strained semiconductor layer is lattice-mismatched with the strain-inducing material.
18. The device of claim 16 , wherein the strain-inducing material comprises a layer disposed over the strained semiconductor layer.
19. The device of claim 16 , wherein the gate spacers further extend continuously to a top surface of the strained semiconductor layer.