Method of forming horizontal gate all around structure
This disclosure provides a horizontal structure by using a double STI recess method. The double STI recess method includes: forming a plurality of fins on the substrate; forming shallow trench isolation between the fins; performing first etch-back on the shallow trench isolation; forming source and drain regions adjacent to channels of the fins; and performing second etch-back on the shallow trench isolations to expose a lower portion of the fins as a larger process window for forming gates of the fins.
1. A method of forming a semiconductor device, the method comprising:
forming a plurality of fins on a substrate, each fin comprising a top channel layer, a bottom channel layer below the top channel layer, a top sacrificial layer between the top channel layer and the bottom channel layer, and a bottom sacrificial layer between the substrate and the bottom channel layer;
forming dielectric material between the fins, the dielectric material exposing a portion of the fins above a first level; and
removing the top sacrificial layer and the bottom sacrificial layer above the first level.
2. The method of claim 1 , wherein the dielectric material comprises shallow trench isolation material.
3. The method of claim 1 , further comprising:
etching the dielectric material to expose the portion of the fins above the first level;
etching the dielectric material to expose a portion of the fins above a second level that is lower than the first level.
4. The method of claim 3 , wherein a difference in height between the first and second levels is about 10-50 nanometers.
5. The method of claim 3 , wherein the etching of the dielectric material to expose the portion of the fins above the first level comprises etching back the dielectric material to expose the top sacrificial layer of the fins.
6. The method of claim 3 , wherein the etching of the dielectric material to expose the portion of the fins above the second level comprises etching back the dielectric material to expose the bottom sacrificial layer of the fins.
7. The method of claim 1 , wherein the portion has a height that is less than about 50 nanometers.
8. The method of claim 1 , further comprising:
oxidizing the top sacrificial layer and the bottom sacrificial layer.
9. A method of forming a semiconductor device, the method comprising:
forming a plurality of fins on a substrate, each fin comprising a top channel layer, a bottom channel layer below the top channel layer, a top sacrificial layer between the top channel layer and the bottom channel layer, and a bottom sacrificial layer between the substrate and the bottom channel layer;
providing dielectric material between the fins;
forming source and drain regions adjacent to the fins;
removing a portion of the top sacrificial layer and the bottom sacrificial layer; and
forming a gate around the top channel layer and the bottom channel layer.
10. The method of claim 9 , further comprising:
forming a poly layer over a preset portion of the fins, wherein the source and drain regions are formed adjacent to the preset portion;
forming an interlayer dielectric layer over the source and drain regions;
forming a cap layer over the interlayer dielectric layer; and
removing the poly layer.
11. The method of claim 10 , wherein the forming of the cap layer over the interlayer dielectric layer comprises:
etching back the interlayer dielectric layer;
forming a nitride layer over the poly layer and the interlayer dielectric layer; and
performing chemical mechanical polishing on the nitride layer and stopping at the poly layer.
12. The method of claim 11 , wherein the nitride layer comprises at least one of SiN and SiCN.
13. A method of forming a semiconductor device, the method comprising:
forming a plurality of fins on a substrate, each fin comprising a top channel layer, a bottom channel layer below the top channel layer, a top sacrificial layer between the top channel layer and the bottom channel layer, and a bottom sacrificial layer between the substrate and the bottom channel layer;
providing dielectric material between the fins;
forming a poly layer over a preset portion of the fins;
forming source and drain regions adjacent to the preset portion;
removing the poly layer;
removing a portion of the top sacrificial layer and the bottom sacrificial layer; and
forming a gate around the top channel layer and the bottom channel layer.
14. The method of claim 13 , further comprising:
forming an interlayer dielectric layer over the source and drain regions; and
forming a cap layer over the interlayer dielectric layer.
15. The method of claim 14 , wherein the forming of the cap layer over the interlayer dielectric layer further comprises:
etching back the interlayer dielectric layer;
forming a nitride layer over the poly layer and the interlayer dielectric layer; and
performing chemical mechanical polishing on the nitride layer and stopping at the poly layer.
16. The method of claim 13 , wherein the dielectric material comprises shallow trench isolation material.
17. The method of claim 13 , wherein the providing of the dielectric material between the fins comprises:
forming the dielectric material between the fins; and
etching back the dielectric material to expose a portion of the fins.
18. The method of claim 13 , wherein forming the source and drain regions comprises creating recesses in the fins for the source and drain regions.
19. The method of claim 13 , further comprising:
forming a hard mask to protect a top of the poly layer; and
forming spacers to protect a sidewall of the poly layer.
20. The method of claim 13 , wherein the forming of the fins on the substrate comprises forming the fins with (i) Si as the top channel layer and the bottom channel layer, and (ii) SiGe as the top sacrificial layer and the bottom sacrificial layer.