Analog circuit and semiconductor device
An object is to obtain a semiconductor device having a high sensitivity in detecting signals and a wide dynamic range, using a thin film transistor in which an oxide semiconductor layer is used. An analog circuit is formed with the use of a thin film transistor including an oxide semiconductor which has a function as a channel formation layer, has a hydrogen concentration of 5×10 19 atoms/cm 3 or lower, and substantially functions as an insulator in the state where no electric field is generated. Thus, a semiconductor device having a high sensitivity in detecting signals and a wide dynamic range can be obtained.
1. A semiconductor device comprising:
a green light-emitting element;
a red light-emitting element;
a blue light-emitting element;
a white light-emitting element;
a first transistor, the first transistor comprising an oxide semiconductor in a channel region;
a second transistor, the second transistor comprising:
a gate over a substrate;
a gate insulating layer over the gate;
an oxide semiconductor layer over the gate insulating layer, wherein the oxide semiconductor layer and the gate are overlapped with each other;
an oxide insulating layer over the oxide semiconductor layer, wherein the oxide insulating layer and the gate are overlapped with each other; and
a source and a drain over the oxide insulating layer,
a third transistor;
a capacitor;
a first line; and
a second line,
wherein one of a source and a drain of the first transistor is electrically connected to the first line,
wherein the other one of the source and the drain of the first transistor is electrically connected to the gate of the second transistor and one terminal of the capacitor,
wherein the other one terminal of the capacitor is electrically connected to one of the source and the drain of the second transistor, one of a source and a drain of the third transistor, and the green light-emitting element,
wherein the other one of the source and the drain of the second transistor is electrically connected to the second line,
wherein the oxide semiconductor layer comprises In, Ga, and Zn, and
wherein a gate of the first transistor is not directly connected to a gate of the third transistor.
2. The semiconductor device according to claim 1 , wherein the source and the drain of the second transistor cover edge portions of the oxide semiconductor layer.
3. The semiconductor device according to claim 1 , wherein an off-state current of the second transistor is 10 −13 A or less at a drain voltage of 1V to 10V and a gate voltage of −5V to −20V.
4. The semiconductor device according to claim 1 , further comprising:
a fourth transistor; and
a third line,
wherein one of a source and a drain of the fourth transistor is electrically connected to the first line,
wherein the gate of the first transistor and a gate of the fourth transistor are electrically connected to the third line,
wherein the other one of the source and the drain of the fourth transistor is electrically connected to one of the source and the drain of the third transistor,
wherein the other one of the source and the drain of the third transistor is electrically connected to the other one terminal of the capacitor, the one of the source and the drain of the second transistor, and the green light-emitting element,
wherein the gate of the third transistor is electrically connected to the other one of the source and the drain of the first transistor, the gate of the second transistor, and the one terminal of the capacitor, and
wherein each of the third transistor and the fourth transistor comprises an oxide semiconductor in a channel region.
5. A display device comprising a display portion and a housing, wherein the display portion comprises the semiconductor device according to claim 1 .
6. A cellular phone comprising a display portion, a speaker, an operation button, and a microphone, wherein the display portion comprises the semiconductor device according to claim 1 .
7. A semiconductor device comprising:
a green light-emitting element;
a red light-emitting element;
a blue light-emitting element;
a white light-emitting element;
a first transistor;
a second transistor, the second transistor comprising:
a gate over a substrate;
a gate insulating layer over the gate;
an oxide semiconductor layer over the gate insulating layer, wherein the oxide semiconductor layer and the gate are overlapped with each other;
an oxide insulating layer over the oxide semiconductor layer, wherein the oxide insulating layer and the gate are overlapped with each other; and
a source and a drain over the oxide insulating layer,
a third transistor;
a capacitor;
a first line; and
a second line,
wherein one of a source and a drain of the first transistor is electrically connected to the first line,
wherein the other one of the source and the drain of the first transistor is electrically connected to the gate of the second transistor and one terminal of the capacitor,
wherein the other one terminal of the capacitor is electrically connected to one of the source and the drain of the second transistor, one of a source and a drain of the third transistor, and the green light-emitting element,
wherein the other one of the source and the drain of the second transistor is electrically connected to the second line,
wherein the oxide semiconductor layer comprises In, Ga, and Zn, and
wherein a gate of the first transistor is not directly connected to a gate of the third transistor.
8. The semiconductor device according to claim 7 , wherein the source and the drain of the second transistor cover edge portions of the oxide semiconductor layer.
9. The semiconductor device according to claim 7 , wherein an off-state current of the second transistor is 10 −13 A or less at a drain voltage of 1V to 10V and a gate voltage of −5V to −20V.
10. The semiconductor device according to claim 7 , further comprising:
a fourth transistor; and
a third line,
wherein one of a source and a drain of the fourth transistor is electrically connected to the first line,
wherein the gate of the first transistor and a gate of the fourth transistor are electrically connected to the third line,
wherein the other one of the source and the drain of the fourth transistor is electrically connected to one of the source and the drain of the third transistor,
wherein the other one of the source and the drain of the third transistor is electrically connected to the other one terminal of the capacitor, the one of the source and the drain of the second transistor, and the green light-emitting element,
wherein the gate of the third transistor is electrically connected to the other one of the source and the drain of the first transistor, the gate of the second transistor, and the one terminal of the capacitor, and
wherein each of the third transistor and the fourth transistor comprises an oxide semiconductor in a channel region.
11. A display device comprising a display portion and a housing, wherein the display portion comprises the semiconductor device according to claim 7 .
12. A cellular phone comprising a display portion, a speaker, an operation button, and a microphone, wherein the display portion comprises the semiconductor device according to claim 7 .
13. A semiconductor device comprising:
a green light-emitting element;
a red light-emitting element;
a blue light-emitting element;
a white light-emitting element;
a first transistor, the first transistor comprising an oxide semiconductor in a channel region;
a second transistor, the second transistor comprising:
a first gate over a substrate;
a first gate insulating layer over the first gate;
an oxide semiconductor layer over the first gate insulating layer;
a source and a drain over the oxide semiconductor layer;
a second gate insulating layer over the source and the drain; and
a second gate over the second gate insulating layer,
a capacitor;
a third transistor;
a first line; and
a second line,
wherein one of a source and a drain of the first transistor is electrically connected to the first line,
wherein the other one of the source and the drain of the first transistor is electrically connected to the first gate of the second transistor and one terminal of the capacitor,
wherein the other one terminal of the capacitor is electrically connected to one of the source and the drain of the second transistor, one of a source and a drain of the third transistor, and the green light-emitting element,
wherein the other one of the source and the drain of the second transistor is electrically connected to the second line,
wherein the oxide semiconductor layer comprises In, Ga, and Zn,
wherein a potential of the second gate is same as a potential of the first gate, and
wherein a gate of the first transistor is not directly connected to a gate of the third transistor.
14. The semiconductor device according to claim 13 , wherein the substrate is a silicon substrate.
15. The semiconductor device according to claim 13 , wherein the second gate insulating layer is in contact with the oxide semiconductor layer.
16. The semiconductor device according to claim 13 , wherein the source and the drain of the second transistor cover edge portions of the oxide semiconductor layer.
17. The semiconductor device according to claim 13 , wherein an off-state current of the second transistor is 10 −13 A or less at a drain voltage of 1V to 10V and a gate voltage of −5V to −20V.
18. The semiconductor device according to claim 13 , further comprising:
a fourth transistor; and
a third line,
wherein one of a source and a drain of the fourth transistor is electrically connected to the first line,
wherein the gate of the first transistor and a gate of the fourth transistor are electrically connected to the third line,
wherein the other one of the source and the drain of the fourth transistor is electrically connected to one of the source and the drain of the third transistor,
wherein the other one of the source and the drain of the third transistor is electrically connected to the other one terminal of the capacitor, the one of the source and the drain of the second transistor, and the green light-emitting element,
wherein the gate of the third transistor is electrically connected to the other one of the source and the drain of the first transistor, the first gate of the second transistor, and the one terminal of the capacitor, and
wherein each of the third transistor and the fourth transistor comprises an oxide semiconductor in a channel region.
19. A display device comprising a display portion and a housing, wherein the display portion comprises the semiconductor device according to claim 13 .
20. A cellular phone comprising a display portion, a speaker, an operation button, and a microphone, wherein the display portion comprises the semiconductor device according to claim 13 .