Nonvolatile semiconductor memory device and method for manufacturing same
A nonvolatile semiconductor memory device, includes: a stacked structural unit including a plurality of insulating films alternately stacked with a plurality of electrode films in a first direction; a selection gate electrode stacked on the stacked structural unit in the first direction; an insulating layer stacked on the selection gate electrode in the first direction; a first semiconductor pillar piercing the stacked structural unit, the selection gate electrode, and the insulating layer in the first direction, a first cross section of the first semiconductor pillar having an annular configuration, the first cross section being cut in a plane orthogonal to the first direction; a first core unit buried in an inner side of the first semiconductor pillar, the first core unit being recessed from an upper face of the insulating layer; and a first conducting layer of the first semiconductor pillar provided on the first core unit to contact the first core unit.
1. A nonvolatile semiconductor memory device, comprising:
a stacked structural unit including a plurality of electrode films stacked in a first direction;
a first selection gate electrode stacked above the stacked structural unit in the first direction;
a first pillar including a first semiconductor pillar and a first insulating layer, the first pillar piercing the first selection gate electrode and extending in the first direction, the first insulating layer being provided on an inner side of the first semiconductor pillar, an upper end of the first insulating layer in the first direction being located above a position of an upper end of the first selection gate electrode in the first direction;
a conductive layer provided on the first semiconductor pillar and the first insulating layer; and
a contact plug electrically connected to the conductive layer.
2. The device according to claim 1 , wherein the conductive layer includes semiconductor material with impurities.
3. The device according to claim 2 , wherein the impurities include phosphorous.
4. The device according to claim 2 , wherein the impurities include arsenic.
5. The device according to claim 1 , wherein the contact plug includes TiN directly connected to the conductive layer.
6. The device according to claim 1 , wherein a first cross-sectional area of the first insulating layer at a position above the upper end of the first selection gate electrode is larger than a second cross-sectional area of the first insulating layer at a position below the upper end of the first selection gate electrode.
7. The device according to claim 1 , wherein a first diameter of the first insulating layer at a position above the upper end of the first selection gate electrode is larger than a second diameter of the first insulating layer at a position below the upper end of the first selection gate electrode.
8. The device according to claim 1 , further comprising:
a second insulating layer disposed on the first selection gate, the upper end of the first insulating layer is below an upper end of the second insulating layer in the first direction.
9. A nonvolatile semiconductor memory device, comprising:
a plurality of electrode films stacked in a first direction, the electrode film being a part of a cell transistor;
a first selection gate electrode stacked above the plurality of electrode films in the first direction;
a first pillar including a first semiconductor pillar and a first insulating layer, the first pillar piercing the first selection gate electrode in the first direction, the first insulating layer being provided on an inner side of the first semiconductor pillar, an upper end of the first insulating layer in the first direction being located above a position of an upper end of the first selection gate electrode in the first direction;
a conductive layer provided on the first semiconductor pillar and the first insulating layer; and
a contact plug electrically connected to the conductive layer.
10. The device according to claim 9 , wherein the conductive layer includes semiconductor material with impurities.
11. The device according to claim 10 , wherein the impurities include phosphorous.
12. The device according to claim 10 , wherein the impurities include arsenic.
13. The device according to claim 9 , wherein the contact plug includes TiN directly connected to the conductive layer.
14. The device according to claim 9 , wherein a first cross-sectional area of the first insulating layer at a position above the upper end of the first selection gate electrode is larger than a second cross-sectional area of the first insulating layer at a position below the upper end of the first selection gate electrode.
15. The device according to claim 9 , wherein a first diameter of the first insulating layer at a position above the upper end of the first selection gate electrode is larger than a second diameter of the first insulating layer at a position below the upper end of the first selection gate electrode.
16. The device according to claim 9 , further comprising:
a second insulating layer disposed on the first selection gate, the upper end of the first insulating layer is below an upper end of the second insulating layer in the first direction.