Multi-layer plate device
A method for the joining of ceramic pieces with a hermetically sealed joint comprising brazing a continuous layer of joining material between the two pieces. The wetting and flow of the joining material is controlled by the selection of the joining material, the joining temperature, the time at temperature, the joining atmosphere, and other factors. The ceramic pieces may be aluminum nitride and the pieces may be brazed with an aluminum alloy under controlled atmosphere. The joint material is adapted to later withstand both the environments within a process chamber during substrate processing, and the oxygenated atmosphere which may be seen within the shaft of a heater or electrostatic chuck.
1. A multi-layer ceramic plate assembly for use in semiconductor processing, said multi-layer ceramic plate assembly comprising:
an upper plate layer, said upper plate layer comprising a first densified ceramic, said upper plate layer comprising a joint interface surface of said first densified ceramic;
a lower plate layer, said lower plate layer comprising a second densified ceramic, said lower plate layer comprising a joint interface surface of said second densified ceramic;
said upper plate layer and said lower plate layer joined together to form an interior space between said upper plate layer and said lower plate layer within an annulus of an annular joining layer, and
an annular joining layer disposed between said joint interface surface of a first densified ceramic of said upper plate layer and said joining surface of said second densified ceramic of said lower plate layer, wherein said annular joining layer joins an outer periphery of a bottom surface of said upper plate layer to a top surface of an outer periphery of said lower plate layer, wherein said joining layer comprises metallic aluminum of greater than 99% by weight, and wherein said joining layer hermetically seals said interior space between said upper plate layer and said lower plate layer from the exterior of said ceramic plate assemble through said joining layer, wherein said joining layer hermetically seals with a joint with a vacuum leak rate of less than 1×10E-9 sccm He/sec.
2. The multi-layer ceramic plate assembly of claim 1 wherein said lower plate layer comprises aluminum nitride.
3. The multi-layer ceramic plate assembly of claim 1 wherein said upper plate layer comprises aluminum nitride.
4. The multi-layer ceramic plate assembly of claim 2 wherein said upper plate layer comprises aluminum nitride.
5. The multi-layer ceramic plate assembly of claim 1 further comprising a heater residing between said upper plate layer and said lower plate layer.
6. The multi-layer ceramic plate assembly of claim 2 further comprising a heater residing between said upper plate layer and said lower plate layer.
7. The multi-layer ceramic plate assembly of claim 4 further comprising a heater residing between said upper plate layer and said lower plate layer.
8. The multi-layer ceramic plate assembly of claim 1 further comprising a clamping electrode residing between said upper plate layer and said lower plate layer.
9. The multi-layer ceramic plate assembly of claim 2 further comprising a clamping electrode residing between said upper plate layer and said lower plate layer.
10. A multi-layer ceramic plate assembly for use in semiconductor processing, said multi-layer ceramic plate assembly comprising:
a top plate layer, said top plate layer comprising ceramic;
an intermediate plate layer, said intermediate plate layer comprising densified ceramic;
a bottom plate layer, said bottom plate layer comprising densified ceramic; and
a plurality of joining layers disposed between plate layers, wherein said joining layers join said plate layers, wherein one or more of said joining layers are an annular joining layer, wherein said annular joining layer joins a top or bottom surface of an outer periphery of a plate layer to a top or bottom surface of an outer periphery of an adjacent plate layer, wherein each of said plurality of joining layers comprises metallic aluminum of greater than 99% by weight, and wherein each of said joining layers hermetically seals an interior space of the ceramic plate assembly from the exterior of said ceramic plate assembly through that joining layer, wherein said joining layers hermetically seal with a joint with a vacuum leak rate of less than 1×10E-9 sccm He/sec.
11. The multi-layer ceramic plate assembly of claim 10 wherein each of said intermediate plate layer and said bottom plate layer comprises aluminum nitride.
12. The multi-layer ceramic plate assembly of claim 10 further comprising a heater residing between said intermediate layer and said bottom plate layer.
13. The multi-layer ceramic plate assembly of claim 11 further comprising a heater residing between said intermediate layer and said bottom plate layer.
14. The multi-layer ceramic plate assembly of claim 11 further comprising a heater residing between said intermediate layer and said bottom plate layer.
15. The multi-layer ceramic plate assembly of claim 14 further comprising an electrode residing between said top plate layer and said intermediate plate layer.