Granted Patent B2

US 9,837,279 · App. 15/066,408 · Granted Dec 5, 2017

Abstract

Claims (21)

1. A manufacturing method of a semiconductor device, the method comprising:

bringing a first catalyst into contact with a workpiece to form an oxide film on a surface of the workpiece; and

bringing a second catalyst different from the first catalyst and the oxide film into contact with each other or moving the second catalyst and the oxide film closer to each other to elute the oxide film into a treatment liquid,

wherein the first catalyst is a solid catalyst.

2. The method of claim 1 ,

wherein the first catalyst is brought into contact with an outer peripheral portion of the workpiece.

3. The method of claim 1 ,

wherein the treatment liquid is water (H 2 O) or water (H 2 O) containing an oxidizing agent.

4. The method of claim 1 ,

wherein the first catalyst is an oxidizing solid catalyst.

5. The method of claim 4 ,

wherein the workpiece is a metal, and

the oxidizing solid catalyst comprises a metal having a lower ionization tendency than the metal of the workpiece.

6. The method of claim 1 ,

wherein the second catalyst is a basic solid catalyst.

7. The method of claim 6 ,

wherein the basic solid catalyst is selected from a group of metal oxides comprising an alkali metal oxide, an alkaline-earth metal oxide, and a rare-earth metal oxide.

8. The method of claim 6 ,

wherein the basic solid catalyst comprises an ion-exchange resin.

9. The method of claim 1 , further comprising moving at least one of the first catalyst and the second catalyst in a plane horizontal to the surface of the workpiece.

10. The method of claim 1 , further comprising rotating at least one of the workpiece, the first catalyst, and the second catalyst in a plane horizontal to the surface of the workpiece.

Assignments (6)