Method of manufacturing semiconductor device, substrate processing device, and recording medium

1. A method for manufacturing a semiconductor device, comprising:

forming a metal carbide film including a first metal element and a second metal element on a substrate, by time-divisionally performing:

forming a first film containing the first metal element and carbon and not containing the second metal element by time-divisionally performing supplying a first precursor gas containing the first metal element and not containing carbon to the substrate to form a first metal-containing layer and supplying a reaction gas containing carbon and not containing a metal element to the first metal-containing layer; and

forming a second film containing the second metal element and carbon and not containing the first metal element on the first film by time-divisionally performing supplying a second precursor gas containing the second metal element differing from the first metal element and not containing carbon to the first film to form a second metal-containing layer on the first film and supplying the reaction gas to the second metal-containing layer,

wherein the first precursor gas and the second precursor gas are halides.

2. The method of claim 1 , wherein at the act of forming the first film, the act of supplying the first precursor gas and the act of supplying the reaction gas are alternately performed multiple times, and at the act of forming the second film, the act of supplying the second precursor gas and the act of supplying the reaction gas are alternately performed multiple times.

3. The method of claim 1 , wherein removing respective gases remaining in a space in which the substrate exists is performed after each of the act of supplying the first precursor gas, the act of supplying the reaction gas at the act of forming the first film, the act of supplying the second precursor gas and the act of supplying the reaction gas at the act of forming the second film.

4. The method of claim 1 , wherein a value of a work function of the metal carbide film is adjusted by controlling the number of performing times of the act of supplying the first precursor gas and the act of supplying the reaction gas at the act of forming the first film and the number of performing times of the act of supplying the second precursor gas and the act of supplying the reaction gas at the act of forming the second film.

5. The method of claim 1 , wherein a value of a work function of the metal carbide film is adjusted by controlling a ratio of the number of performing times of the act of forming the first film and the number of performing times of the act of forming the second film.

6. The method of claim 1 , wherein a value of a work function of the metal carbide film is adjusted by controlling a processing condition in at least one of the act of supplying the first precursor gas, the act of supplying the second precursor gas and the act of supplying the reaction gas to make reaction unsaturated in the at least one of the acts.

7. The method of claim 1 , wherein the reaction gas is a hydrocarbon-based gas.

8. The method of claim 1 , wherein the reaction gas is a nitrogen-free and silicon-free gas.

9. The method of claim 1 , wherein the act of supplying the reaction gas containing carbon to the first metal-containing layer makes a substitution reaction with at least a portion of the first metal-containing layer to bond the first metal element to the carbon.

10. The method of claim 1 , wherein the act of supplying the reaction gas to the second metal-containing layer makes a substitution reaction with at least a portion of the second metal-containing layer to bond the second metal element to the carbon.

11. The method of claim 1 , wherein the first metal element is titanium (Ti), the second metal element is aluminum (Al), and the metal carbide film is a TiAlC film.

12. The method of claim 1 , wherein the reaction gas is C 3 H 6 .

13. A method for manufacturing a semiconductor device, comprising:

forming a metal carbide film including a first metal element and a second metal element on a substrate, by time-divisionally performing:

forming a first film containing the first metal element and carbon and not containing the second metal element by time-divisionally performing supplying a first precursor gas containing the first metal element and not containing carbon to the substrate to form a first metal-containing layer and supplying a reaction gas containing carbon and not containing a metal element to the first metal-containing layer; and

forming a second film containing the second metal element and carbon and not containing the first metal element on the first film by time-divisionally performing supplying a second precursor gas containing the second metal element differing from the first metal element and not containing carbon to the first film to form a second metal-containing layer on the first film and supplying the reaction gas to the second metal-containing layer,

wherein the first metal element is titanium (Ti), the second metal element is aluminum (Al), and the metal carbide film is a TiAlC film.

14. A method for manufacturing a semiconductor device, comprising:

forming a metal carbide film including a first metal element and a second metal element on a substrate, by time-divisionally performing:

forming a first film containing the first metal element and carbon and not containing the second metal element by time-divisionally performing supplying a first precursor gas containing the first metal element and not containing carbon to the substrate to form a first metal-containing layer and supplying a reaction gas containing carbon and not containing a metal element to the first metal-containing layer; and

forming a second film containing the second metal element and carbon and not containing the first metal element on the first film by time-divisionally performing supplying a second precursor gas containing the second metal element differing from the first metal element and not containing carbon to the first film to form a second metal-containing layer on the first film and supplying the reaction gas to the second metal-containing layer,

wherein the reaction gas is C 3 H 6 .