Robust high performance low hydrogen silicon carbon nitride (SiCNH) dielectrics for nano electronic devices
A method for depositing a dielectric layer that includes introducing a substrate into a process chamber of a deposition tool; and heating the substrate to a process temperature. The method may further include introducing precursors that include at least one dielectric providing gas species for a deposited layer and at least one hydrogen precursor gas into the process chamber of the deposition tool. The hydrogen precursor gas is introduced to the deposition chamber at a flow rate ranging from 50 sccm to 5000 sccm. The molar ratio for Hydrogen/Silicon gas precursor can be equal or greater than 0.05.
1. A method for depositing a dielectric layer of SiCNH comprising:
introducing a substrate into a process chamber of a deposition tool;
heating the substrate to a process temperature;
introducing precursors that include at least one dielectric providing gas species for a deposited layer of SiCNH and at least one hydrogen precursor gas of H 2 into the process chamber of the deposition tool, wherein the hydrogen precursor gas is introduced to the process chamber at a flow rate ranging from 50 sccm to 5000 sccm; and
activating a plasma in the process chamber, wherein deposited SiCNH has a shrinkage that is less than 4.5% after being treated with an ultraviolet curing process for a temperature ranging from 350° C. to 400° C. for a time period ranging from 500 seconds to 600 seconds.
2. The method of claim 1 , wherein the deposition tool comprises a plasma enhanced chemical vapor deposition chamber or a high density plasma chemical vapor deposition (HDP) chamber.
3. The method of claim 1 , wherein the at least one dielectric providing gas species for the deposited layer comprises at least one of a silicon containing precursor, a carbon containing precursor and a nitrogen containing precursor.
4. The method of claim 3 , wherein the silicon containing precursor comprises hexachlorodisilane (Si 2 Cl 6 ), tetrachlorosilane (SiCl 4 ), dichlorosilane (Cl 2 SiH 2 ), trichlorosilane (Cl 3 SiH), methylsilane ((CH 3 )SiH 3 ), dimethylsilane ((CH 3 ) 2 SiH 2 ), trimethyl silane ((CH 3 ) 3 SiH), tetramethyl silane ((CH 3 ) 4 Si), ethylsilane ((CH 3 CH 2 )SiH 3 ), methyldisilane ((CH 3 )Si 2 H 5 ), dimethyldisilane ((CH 3 ) 2 Si 2 H 4 ), hexamethyldisilane ((CH 3 ) 6 Si 2 ) or combinations thereof.
5. The method of claim 1 , wherein the carbon containing precursor comprises methylsilane (CH 3 SiH 3 ), dimethylsilane ((CH 3 ) 2 SiH 2 ), trimethyl silane ((CH 3 ) 3 SiH), tetramethyl silane ((CH 3 ) 4 Si), ethylsilane (CH 3 CH 2 SiH 3 ), methane (CH 4 ), ethylene (C 2 H 4 ), ethyne (C 2 H 2 ), propane (C 3 H 8 ), propene (C 3 H 6 ), butyne (C 4 H 6 ) or combinations thereof.
6. The method of claim 1 , wherein the nitrogen containing precursor comprises ammonia (NH 3 ), hydrazine (N 2 H 4 ), methyl hydrazine ((CH 3 )HN 2 H 2 ), dimethyl hydrazine ((CH 3 ) 2 N 2 H 2 ), t-butylhydrazine (C 4 H 9 N 2 H 3 ), phenylhydrazine (C 6 H 5 N 2 H 3 ), N 2 , N 2 /H 2 , NH 3 , N 2 H 4 plasmas, 2,2′-azotertbutane ((CH 3 ) 6 C 2 N 2 ), methylazide (CH 3 N 3 ), ethylazide (C 2 HsN 3 ), trimethylsilylazide (Me 3 SiN 3 ), and combinations thereof.
7. The method of claim 1 , wherein the at least one dielectric providing gas species for the deposited layer is introduced to the process chamber at a flow rate ranging from 50 sccm to about 2,000 sccm.
8. The method of claim 1 , wherein the shrinkage ranges from 1% to 3%.
9. The method of claim 1 , wherein the SiCNH has a density greater than 2.25 grm/cm 3 .