IP Library Granted Patent US 9,876,224
Granted Patent B2
US 9,876,224 · App. 15/068,388 · Granted Jan 23, 2018

Silicon-embedded copper nanostructure network for high energy storage

Inventor: Tianyue Yu (Sunnyvale, CA)
Assignee: Amprius, Inc.
H01M4/366H01M4/134H01M4/1395H01M4/38H01M4/386H01M4/387H01M4/483H01M4/626H01M10/0525B82Y30/00H01M4/622H01M4/624H01M10/052H01M2004/021
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 9,876,224
App. No.
15/068,388
Granted
Jan 23, 2018
Kind
B2
Abstract

Provided herein are nanostructure networks having high energy storage, electrochemically active electrode materials including nanostructure networks having high energy storage, as well as electrodes and batteries including the nanostructure networks having high energy storage. According to various implementations, the nanostructure networks have high energy density as well as long cycle life. In some implementations, the nanostructure networks include a conductive network embedded with electrochemically active material. In some implementations, silicon is used as the electrochemically active material. The conductive network may be a metal network such as a copper nanostructure network. Methods of manufacturing the nanostructure networks and electrodes are provided. In some implementations, metal nanostructures can be synthesized in a solution that contains silicon powder to make a composite network structure that contains both. The metal nanostructure growth can nucleate in solution and on silicon nanostructure surfaces.

Claims (28)

1. A structure comprising:

a plurality of nanowires of a first type; and

a plurality of nanowires of a second type;

wherein at least a portion of the nanowires of the second type is growth rooted on at least some of the nanowires of the first type.

2. The structure of claim 1 , wherein the nanowires of the first type comprise electrochemically active material.

3. The structure of claim 2 , wherein the electrochemically active material is selected from the group consisting of silicon, silicon oxide(s), silicides, germanium, and tin.

4. The structure of claim 1 , wherein the nanowires of the second type comprise electronically conductive material.

5. The structure of claim 4 , wherein the electronically conductive material is selected from the group consisting of copper, silver, gold, palladium, nickel, and platinum or alloys thereof.

6. The structure of claim 1 , wherein the structure has a porosity between about 20% and 80%.

7. An electrode for a lithium battery comprising:

a substrate in electronic communication with a structure comprising:

a plurality of nanostructures of a first type; and

a plurality of nanostructures of a second type;

wherein at least a portion of the nanostructure of the second type is growth rooted in at least some of the nanostructures of the first type and wherein the nanostructures of the second type comprise a plurality of metal nanowires.

8. A lithium battery comprising:

a first electrode;

a second electrode opposite in electrochemical function to the first electrode, wherein the second electrode is as described in claim 7 ; and

an electrolyte in ionic communication with both the first electrode and the second electrode.

9. The structure of claim 3 , wherein the nanowires of the second type comprise electronically conductive material.

10. The structure of claim 9 , wherein the electronically conductive material is selected from the group consisting of copper, silver, gold, palladium, nickel, and platinum or alloys thereof.

11. An electrode structure comprising:

a network of metal nanostructures including metal nanostructures in direct contact with other metal nanostructures in the network; and

structures of high capacity active material embedded in the network of metal nanostructures, wherein the smallest dimension of the high capacity active material structures is at least an order of magnitude greater than that of the metal nanostructures.

12. The electrode structure of claim 11 , further comprising a conductive surface coating at least around metal nanostructure-high capacity active material structure interfaces.

13. The electrode structure of claim 11 , wherein the metal nanostructures are copper, silver, gold, palladium, nickel, and platinum or alloys thereof.

14. The electrode structure of claim 11 , wherein electrode structure has a porosity between 20% and 80%.

15. The electrode structure of claim 11 , wherein the electrode structure is not attached to a current collector substrate.

16. The electrode structure of claim 11 , wherein the electrode structure is attached to a current collector substrate.

Assignments (4)
CONFIRMATORY ASSIGNMENT Recorded Feb 9, 2024
From: AMPRIUS, INC.
To: AMPRIUS TECHNOLOGIES, INC.
Reel/Frame 066548/0229 →
CONFIRMATORY ASSIGNMENT Recorded Jun 15, 2022
From: AMPRIUS, INC.
To: AMPRIUS TECHNOLOGIES, INC.
Reel/Frame 060455/0620 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 6, 2022
From: YU, TIANYUE
To: AMPRIUS, INC.
Reel/Frame 059844/0623 →
SECURITY INTEREST Recorded Dec 18, 2017
From: AMPRIUS, INC.
To: SILICON VALLEY BANK
Reel/Frame 044421/0318 →
Continuity (3)
Continuation 14255418 · Apr 17, 2014
Provisional Application 61813175 · Apr 17, 2013
Related Publication 20170025676A1 · Jan 26, 2017