EUV mask and method for manufacturing same

1. An EUV mask, comprising:

a substrate;

a first line-shaped portion provided on the substrate, a first layer and a second layer being stacked in the first line-shaped portion, the first layer including a first material, the second layer including a second material;

a second line-shaped portion provided on the substrate, a first layer and a second layer being stacked in the second line-shaped portion, the first layer including the first material, the second layer including the second material;

a first sidewall disposed on a side surface of the first line-shaped portion, the first sidewall including an oxide of the first material and covering a side surface of the first layer and a side surface of the second layer; and

a second sidewall disposed on a side surface of the second line-shaped portion, the second sidewall including the oxide of the first material and covering a side surface of the first layer and a side surface of the second layer,

wherein a portion of the first sidewall disposed on the side surface of the first layer is thicker than a portion of the first sidewall disposed on the side surface of the second layer.

2. The EUV mask according to claim 1 , wherein

the first sidewall is a continuous film covering the side surface of the first line-shaped portion, and

the second sidewall is a continuous film covering the side surface of the second line-shaped portion.

3. The EUV mask according to claim 1 , wherein a configuration of a surface of the first sidewall is a wave-like configuration corresponding to the stacking of the first layer and the second layer.

4. The EUV mask according to claim 1 , wherein the absolute value of a difference between a thickness of the first sidewall and a thickness of the second sidewall is greater than the absolute value of a difference between a width of the first line-shaped portion and a width of the second line-shaped portion.

5. The EUV mask according to claim 4 , wherein

a first region and a second region corresponding to a same patterning pattern are set, and

the first line-shaped portion is disposed inside the first region, the second line-shaped portion is disposed inside the second region, and the first line-shaped portion and the second line-shaped portion correspond to the same position of the patterning pattern.

6. The EUV mask according to claim 1 , wherein the first material is silicon.

7. The EUV mask according to claim 1 , wherein the second material is molybdenum.

8. An EUV mask, comprising:

a substrate;

a first line-shaped portion provided on the substrate, a first layer and a second layer being stacked in the first line-shaped portion, the first layer including a first material, the second layer including a second material;

a second line-shaped portion provided on the substrate, a first layer and a second layer being stacked in the second line-shaped portion, the first layer including the first material, the second layer including the second material;

a first sidewall disposed on a side surface of the first line-shaped portion, the first sidewall including an oxide of the first material and covering a side surface of the first layer and a side surface of the second layer; and

a second sidewall disposed on a side surface of the second line-shaped portion, the second sidewall including the oxide of the first material and covering a side surface of the first layer and a side surface of the second layer,

wherein a configuration of a surface of the first sidewall is a wave-like configuration corresponding to the stacking of the first layer and the second layer.

9. An EUV mask, comprising:

a substrate;

a first line-shaped portion provided on the substrate, a first layer and a second layer being stacked in the first line-shaped portion, the first layer including a first material, the second layer including a second material;

a second line-shaped portion provided on the substrate, a first layer and a second layer being stacked in the second line-shaped portion, the first layer including the first material, the second layer including the second material;

a first sidewall disposed on a side surface of the first line-shaped portion, the first sidewall including an oxide of the first material and covering a side surface of the first layer and a side surface of the second layer; and

a second sidewall disposed on a side surface of the second line-shaped portion, the second sidewall including the oxide of the first material and covering a side surface of the first layer and a side surface of the second layer,

wherein the first material is silicon.

10. The EUV mask according to claim 9 , wherein

the first sidewall is a continuous film covering the side surface of the first line-shaped portion, and

the second sidewall is a continuous film covering the side surface of the second line-shaped portion.

11. The EUV mask according to claim 9 , wherein a portion of the first sidewall disposed on the side surface of the first layer is thicker than a portion of the first sidewall disposed on the side surface of the second layer.

12. The EUV mask according to claim 9 , wherein a configuration of a surface of the first sidewall is a wave-like configuration corresponding to the stacking of the first layer and the second layer.

13. The EUV mask according to claim 9 , wherein the absolute value of a difference between a thickness of the first sidewall and a thickness of the second sidewall is greater than the absolute value of a difference between a width of the first line-shaped portion and a width of the second line-shaped portion.

14. The EUV mask according to claim 13 , wherein

a first region and a second region corresponding to a same patterning pattern are set, and

the first line-shaped portion is disposed inside the first region, the second line-shaped portion is disposed inside the second region, and the first line-shaped portion and the second line-shaped portion correspond to the same position of the patterning pattern.

15. The EUV mask according to claim 9 , wherein the second material is molybdenum.