Photoresist and method
View Patent ↗Multi-layer photoresists, methods of forming the same, and methods of patterning a target layer using the same are disclosed. In an embodiment, a method includes depositing a reflective film stack over a target layer, the reflective film stack including alternating layers of a first material and a second material, the first material having a higher refractive index than the second material; depositing a photosensitive layer over the reflective film stack; patterning the photosensitive layer to form a first opening exposing the reflective film stack, patterning the photosensitive layer including exposing the photosensitive layer to a patterned energy source, the reflective film stack reflecting at least a portion of the patterned energy source to a backside of the photosensitive layer; patterning the reflective film stack through the first opening to form a second opening exposing the target layer; and patterning the target layer through the second opening.
1. A method comprising:
depositing a reflective film stack on a target layer, the reflective film stack comprising alternating layers of a first material and a second material, the first material comprising silicon, and the second material comprising molybdenum;
depositing a photosensitive layer in direct contact with the first material or the second material;
exposing the photosensitive layer to a patterned energy source, wherein the reflective film stack reflects at least a portion of the patterned energy source to a backside of the photosensitive layer;
developing the photosensitive layer to form a first opening exposing the reflective film stack;
patterning the reflective film stack through the first opening to form a second opening exposing the target layer; and
patterning the target layer through the second opening.
2. The method of claim 1 , wherein the first material has a higher refractive index than the second material.
3. The method of claim 2 , wherein a ratio of a refractive index of the first material to a refractive index of the second material is from 1.05 to 1.10.
4. The method of claim 1 , further comprising exposing the reflective film stack to an adhesion promoter to increase a hydrophobicity of the reflective film stack.
5. The method of claim 1 , wherein a ratio of a thickness of a layer of the first material to a thickness of a layer of the second material is from 1:1 to 3:2.
6. The method of claim 1 , wherein the reflective film stack comprises from 35 to 45 pairs of layers of the first material and the second material.
7. The method of claim 1 , further comprising depositing a planarity layer on the target layer, wherein the target layer has a non-planar surface, wherein the reflective film stack is deposited on the planarity layer.
8. A method comprising:
providing a semiconductor wafer comprising a target layer on a semiconductor substrate, wherein the target layer has a non-planar top surface;
depositing a planarity layer on the target layer;
performing a planarization process on the planarity layer;
depositing a reflective film stack on the planarity layer, wherein the reflective film stack comprises alternating layers of a first reflective material and a second reflective material, wherein a ratio of a refractive index of the first reflective material to a refractive index of the second reflective material is from 1.05 to 1.10;
depositing a photosensitive layer on the reflective film stack;
patterning the photosensitive layer and the reflective film stack; and
patterning the target layer using the reflective film stack as a mask.
9. The method of claim 8 , wherein patterning the photosensitive layer comprises exposing the photosensitive layer to a patterned energy source, wherein the reflective film stack reflects at least a portion of the patterned energy source to a backside of the photosensitive layer.
10. The method of claim 9 , wherein the patterned energy source is reflected at an interface between the first reflective material and the second reflective material.
11. The method of claim 8 , wherein the photosensitive layer is deposited in direct contact with the first reflective material or the second reflective material.
12. The method of claim 8 , wherein the planarity layer is deposited by a spin-on process.
13. The method of claim 8 , wherein the second reflective material comprises molybdenum (Mo).
14. The method of claim 13 , wherein the first reflective material comprises silicon (Si).
15. The method of claim 13 , wherein the first reflective material comprises beryllium (Be).
16. A method comprising:
providing a target layer on a semiconductor substrate;
planarizing the target layer;
after planarizing the target layer, depositing a reflective film stack on the target layer, wherein the reflective film stack comprises alternating layers of a first material and a second material different from the first material;
depositing a photosensitive layer on the reflective film stack;
exposing the photosensitive layer to extreme ultraviolet (EUV) radiation, wherein a portion of the EUV radiation is reflected from an interface between the first material and the second material;
developing the photosensitive layer to form a first opening exposing the reflective film stack;
etching the reflective film stack to extend the first opening to expose the target layer; and
etching the target layer through the first opening.
17. The method of claim 16 , wherein the target layer comprises a semiconductor material, a conductive layer, or a dielectric layer.
18. The method of claim 16 , further comprising exposing the reflective film stack to hexamethyldisilazane (HMDS).
19. The method of claim 16 , wherein the reflective film stack is formed directly on the target layer.
20. The method of claim 16 , wherein the photosensitive layer is deposited directly on the reflective film stack.