Method of manufacturing a semiconductor device and recording medium
A method of manufacturing a semiconductor device includes forming a seed layer containing a metal element on a substrate by performing a first process and a second process in a time-division manner. The first process supplying and exhausting organic metal-containing gas containing the metal element to the substrate. The second process supplying and exhausting inorganic metal-containing gas containing the metal element to the substrate, and forming a metal-containing nitride film on the substrate on which the seed layer is formed using the seed layer as a seed by performing a third process and a fourth process in a time-division manner. The third process supplying and exhausting the inorganic metal-containing gas to the substrate. The fourth process supplying and exhausting nitrogen-containing gas to the substrate.
1. A method of manufacturing a semiconductor device comprising:
forming a seed layer containing a metal element on a substrate by performing a first process and a second process in a time-division manner a predetermined number of times,
the first process supplying and exhausting organic metal-containing gas containing the metal element to the substrate,
the second process supplying and exhausting inorganic metal-containing gas containing the metal element to the substrate; and
forming a metal-containing nitride film on the substrate on which the seed layer is formed using the seed layer as a seed by performing a third process and a fourth process in a time-division manner a predetermined number of times,
the third process supplying and exhausting the inorganic metal-containing gas to the substrate,
the fourth process supplying and exhausting nitrogen-containing gas to the substrate.
2. The method of manufacturing a semiconductor device according to claim 1 , wherein
a first nuclear density is lower than a second nuclear density, wherein the first nuclear density is a nuclear density of the seed layer and the second nuclear density is a nuclear density of the metal-containing nitride film when the metal-containing nitride film is formed without using the seed layer on the substrate.
3. The method of manufacturing a semiconductor device according to claim 1 , wherein
in the forming of the seed layer, the first process and the second process are performed in order in a time-division manner a predetermined number of times.
4. The method of manufacturing a semiconductor device according to claim 1 , wherein
in the forming of the seed layer, the second process and the first process are performed in order in a time-division manner a predetermined number of times.
5. The method of manufacturing a semiconductor device according to claim 1 , wherein
forming the seed layer further includes a fifth process of supplying and exhausting the nitrogen-containing gas.
6. The method of manufacturing a semiconductor device according to claim 5 , wherein
the first process, the second process and the fifth process are performed in order and in a time-division manner a predetermined number of times in the forming of the seed layer.
7. The method of manufacturing a semiconductor device according to claim 5 , wherein
the second process, the first process and the fifth process are performed in order and in a time-division manner a predetermined number of times in the forming of the seed layer.
8. The method of manufacturing a semiconductor device according to claim 1 , wherein
the organic metal-containing gas contains at least one of an ethyl group and a methyl group, and the inorganic metal-containing gas contains a halogen group.
9. The method of manufacturing a semiconductor device according to claim 1 , wherein
the metal element is any one of titanium, tantalum, tungsten, cobalt, yttrium, ruthenium, aluminum, hafnium, zirconium, or molybdenum.
10. The method of manufacturing a semiconductor device according to claim 1 , wherein
in the forming of the seed layer, the first process and the second process are each performed once.
11. A method of manufacturing a semiconductor device comprising:
forming a seed layer containing a metal element on a substrate by performing a first process and a second process in a time-division manner a predetermined number of times,
the first process supplying and exhausting organic metal-containing gas containing the metal element to the substrate,
the second process supplying and exhausting inorganic metal-containing gas containing the metal element to the substrate; and
forming a metal-containing nitride film on the substrate on which the seed layer is formed using the seed layer as a seed by performing a third process and a fourth process simultaneously a predetermined number of times,
the third process supplying and exhausting the inorganic metal-containing gas to the substrate,
the fourth process supplying and exhausting nitrogen-containing gas to the substrate.
12. A non-transitory computer-readable recording medium storing a program that causes a computer to execute:
a procedure of forming a seed layer on the substrate by performing a first procedure and a second procedure in a time-division manner a predetermined number of times,
the first procedure supplying and exhausting organic metal-containing gas containing a metal element to a substrate,
the second procedure supplying and exhausting inorganic metal-containing gas containing the metal element to the substrate; and
a procedure of forming a metal-containing nitride film on the substrate on which the seed layer is formed using the seed layer as a seed by performing a third procedure and a fourth procedure in a time-division manner a predetermined number of times,
the third procedure supplying and exhausting the inorganic metal-containing gas to the substrate,
the fourth procedure supplying and exhausting nitrogen-containing gas to the substrate.