Semiconductor device
A semiconductor device according to embodiments described below includes an element region and a peripheral region. The element region is disposed on a substrate and semiconductor elements are collocated in the element region. The peripheral region is disposed on the substrate and surrounds the element region. The element region extends in a first direction parallel to the substrate and includes a plurality of wiring layers laminated on the substrate. The peripheral region includes a peripheral layer arranged to surround the element region. The peripheral layer includes a first part extending in the first direction and a second part extending in a second direction intersecting the first direction. The cross-section structures of the first part and the second part are different from one another.
1. A semiconductor device comprising:
an element region disposed on a substrate, semiconductor elements being collocated in the element region; and
a peripheral region disposed on the substrate, the peripheral region surrounding the element region, wherein
the element region extends in a first direction parallel to the substrate and includes a plurality of wiring layers laminated on the substrate,
the peripheral region includes a peripheral layer arranged to surround the element region,
the peripheral layer includes a first part extending in the first direction and a second part extending in a second direction intersecting the first direction,
the first part and the second part have mutually different cross-section structures,
the first part is constituted of a second material having an internal stress with an opposite sign to an internal stress of a first material constituting the wiring layer, and
the second part is constituted of a third material having an internal stress with an identical sign to the internal stress of the first material.
2. The semiconductor device according to claim 1 , wherein
the second part has a larger cross-sectional area in the cross-section structure than the first part.
3. The semiconductor device according to claim 1 , wherein
the second part has a higher arrangement density than the first part.
4. The semiconductor device according to claim 1 , wherein
the third material is a material identical to the first material.
5. The semiconductor device according to claim 1 , wherein
the second material is titanium nitride (TiN) or titanium nitride aluminum (TiAlN).
6. The semiconductor device according to claim 5 , wherein
the first material and the third material are tungsten.
7. The semiconductor device according to claim 1 , wherein
the plurality of wiring layers are collocated on the substrate with interlayer insulating films therebetween.
8. The semiconductor device according to claim 7 , wherein
the second part has a larger cross-sectional area in the cross-section structure than the first part.
9. The semiconductor device according to claim 7 , wherein
the second part has a higher arrangement density than the first part.
10. The semiconductor device according to claim 7 , further comprising:
a memory layer disposed on a side surface of the plurality of wiring layers and the interlayer insulating films, and
a semiconductor layer facing to the plurality of wiring layers across the memory layer.
11. The semiconductor device according to claim 1 , further comprising:
an isolation insulating film disposed on the substrate, wherein
the peripheral layer has a lower end in contact with the isolation insulating film.
12. The semiconductor device according to claim 1 , wherein
the peripheral layer is a guard ring for preventing water from invading from outside.
13. The semiconductor device according to claim 1 , wherein
the peripheral layer is disposed in a dicing region for dicing memory chips.